2SD1781K NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Very low VCE(sat).VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K Collector 3 3 3 C B Top View 1 1 2 K 2 E 2 Base D 1 Emitter F G MARKING AF REF. = hFE ranking A B C D E F Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG 40 32 5 0.8 200 150, -55~150 V V V A mW °C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction and Storage Temperature ELECTRICAL CHARACTERISTICS Parameter (TA = 25°C unless otherwise noted) Symbol Min. Typ. Max. Unit Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain BVCBO BVCEO BVEBO ICBO IEBO hFE 40 32 5 - - - V V V μA μA 120 - 0.5 0.5 390 Collector–Emitter Saturation Voltage VCE(sat) - - 0.4 V fT COB - 150 10 - MHz pF Transition Frequency Collector Output Capacitance Test Conditions IC = 50μA, IE = 0 IC = 1mA, IB = 0 IE = 50μA, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC = 100mA, VCE = 3.0V IC = 500mA, IB = 50mA VCE = 5V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz CLASSIFICATION OF hFE Rank Range Marking http://www.SeCoSGmbH.com/ 01-June-2002 Rev. A Q R 120 – 270 AFQ 180-390 AFR Any changes of specification will not be informed individually. Page 1 of 2 2SD1781K Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 01-June-2002 Rev. A Any changes of specification will not be informed individually. Page 2 of 2