SECOS 2SA1980

2SA1980
-150 mA, -50 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
Low collector saturation voltage: VCE(sat) =-0.3V(Max.)
Low output capacitance : Cob=4pF (Typ.)
Complements of the 2SC5343
G
H
1 Emitter
2 Collector
3 Base
J
CLASSIFICATION OF hFE
A
Product-Rank
2SA1980-O
2SA1980-Y
2SA1980-G
2SA1980-L
Range
70~140
120~240
200~400
300~700
D
B
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
REF.
K
E
C
A
B
C
D
E
F
G
H
J
K
F
Collector
2
3Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-50
V
Emitter to Base Voltage
VEBO
-5
V
IC
-150
mA
PC
625
mW
TJ, TSTG
150, -55~150
°C
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
V(BR)CBO
-50
-
-
V
IC=-100µA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
-50
-
-
V
IC=-10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V
IE=-10µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA
VCB=-50 V, IE=0
Collector Cut-Off Current
ICEO
-
-
-0.1
µA
VEB=-5 V, IC=0
DC Current Gain
hFE
70
-
700
VCE(sat)
-
-
-0.30
V
IC=-100mA, IB=-10mA
fT
80
-
-
MHz
Cob
-
4
7
pF
VCB=-10V, IE=0, f=1MHz
dB
VCE=-6V, IC=-0.1mA, f=1KHz,
RS=10KΩ
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
NF
-
-
10
Test Conditions
VCE=-6V, IC=-2mA
VCE=-10V, IC =-1mA
Any changes of specification will not be informed individually.
Page 1 of 2
2SA1980
Elektronische Bauelemente
-150 mA, -50 V
PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2