2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H 1Emitter 2Collector 3Base CLASSIFICATION OF hFE(1) Product-Rank 2SB1116A-L Range J 2SB1116A-K 135~270 A 2SB1116A-U 200~400 D Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. B 300~600 A B C D E F G H J K K E C F Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -60 V Emitter to Base Voltage VEBO -6 V Collector Current - Continuous IC -1 A Collector Power Dissipation PC 0.75 W TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO -80 - - V Collector to Emitter Breakdown Voltage V(BR)CEO -60 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -6 - - V IE= -100µA, IC=0 ICBO - - -0.1 µA VCB= -80V, IE=0 µA VEB= -6V, IC=0 Collector Cut-Off Current Emitter Cut-Off Current IEBO - - -0.1 hFE (1) 135 - 600 hFE (2) 81 - - Collector to Emitter Saturation Voltage VCE(sat) - - -0.3 Base to Emitter Saturation Voltage DC Current Gain Test Conditions IC= -100µA, IE=0 VCE= -2V, IC= -0.1A VCE= -2V, IC= -1A V IC= -1A, IB= -50mA VBE(sat) - - -1.2 V IC= -1A, IB= -50mA Base to Emitter voltage VBE -0.6 - -0.7 V VCE= -2V, IC= -0.05A Collector-Base Capacitance Ccb - 25 - pF fT 70 - - MHz Transition Frequency Turn-on time TON - 0.07 - Storage time TS - 0.7 - Fall time TF - 0.07 - http://www.SeCoSGmbH.com/ 21-Jan-2011 Rev. B us VCB= -10V, IE=0, f=1MHz VCE= -2V, IC= -0.1A VCC= -10V, IC= -0.1A, IB1= -IB2= -0.01A VBE(off) = 2 ~ 3V Any changes of specification will not be informed individually. Page 1 of 2 2SB1116A Elektronische Bauelemente -1 A, -80 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2