B772C -3A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-126C FEATURES Low frequency power amplifier High Current Low Speed Switching Emitter Collector Base CLASSIFICATION OF hFE Product-Rank B772C-R B772C-O B772C-Y B772C-GR Range 60~120 100~200 160~320 200~400 REF. A B C D E F G Millimeter Min. Max. 7.80 8.20 3.00 3.40 10.80 11.20 15.30 15.70 3.90 4.10 4.04 4.24 2.28 TYP. REF. H J K L M N O Millimeter Min. Max. 0.80 1.60 0.45 0.60 0.66 0.86 1.30 1.50 1.17 1.37 3.10 3.30 2.70 2.90 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V Collector Current - Continuous IC -3 A Collector Power Dissipation PC 1.25 W TJ, TSTG -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base-emitter saturation voltage Transition Frequency http://www.SeCoSGmbH.com/ 23-Aug-2012 Rev. B Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO - -1 -10 -1 400 -0.5 -1.5 V V V μA μA μA VCE(sat) VBE(sat) -40 -30 -6 60 32 - fT 50 - - MHz hFE V V Test Conditions IC= -100μA, IE=0 IC= -10mA, IB=0 IE= -100μA, IC=0 VCB= -40V, IE=0 VCE= -30V, IB=0 VEB= -6V, IC=0 VCE= -2V, IC= -1A VCE= -2V, IC= -100mA IC= -2A, IB= -200mA IC= -2A, IB= -200mA VCE= -5V, IC= -100mA f=10MHz Any changes of specification will not be informed individually. Page 1 of 2 B772C Elektronische Bauelemente -3A , -40V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 23-Aug-2012 Rev. B Any changes of specification will not be informed individually. Page 2 of 2