2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 High breakdown voltage and high current BVCEO=-80V, IC=-1A Good hFE linearity Complements to 2SD1898 1 A 2 B C 3 E E PACKAGE INFORMATION B D Weight: 0.05 g (approximately) F G H Collector 24 1 A B C D E F Base ZL K J REF. MARKING C 3 Emitter L Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction & Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG -80 -80 -5 -1 0.5 150, -55~150 V V V A W °C PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output Capacitance Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT COB -80 -80 -5 82 - 100 25 -1 -1 390 -0.4 - V V V μA μA V MHz pF Test Conditions IC=-50μA, IE=0 IC= -1mA, IB=0 IE=-50μA, IC=0 VCB=-60V, IE=0 VEB=-4 V, IC=0 VCE=-3V, IC= -100mA IC=-500mA, IB= -50mA VCE=-5V, IC=-50mA, f=30MHz VCB=-10V, IE=0, f=1MHz CLASSIFICATION OF hFE2 http://www.SeCoSGmbH.com/ 01-July-2007 Rev. A Rank Q R S Range 82 - 180 120 - 270 180 - 390 Any changes of specification will not be informed individually. Page 1 of 2 2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente CHARACTERISTIC CURVES -10 -1 -0.1 0 -0.35mA -0.25mA IC/IB=20 10 -0.05 -0.02 -0.01 -1 -2 -0.2mA -0.4 -0.15mA -0.1mA -0.2 200 100 50 20 10 5 2 1 -5 -10 -20 -50-100-200-500-1000-2000 Ta=25 C VCE=-5V 1 2 5 COLLECTOR CURRENT : IC (mA) Fig.5 -2 -5 -10 Fig. 7 Emitter input capacitance vs. emitter-base voltage http://www.SeCoSGmbH.com/ 01-July-2007 Rev. A 1000 Ta=25 C f=1MHz IE=0A 500 200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance vs. collector-base voltage -1 IC Max. -0.5 -0.2 s -1 DC current gain vs. collector current s -0.5 EMITTER TO BASE VOLTAGE : VEB (V) Fig.3 m 10 -0.1 -0.2 -5 -10 -20 -50-100 -200-500-1000-2000 COLLECTOR CURRENT : IC (mA) * 00 20 10 -1 -2 0m =1 50 -1V 50 Ta=25 C Single nonrepetitive pulse IC Max. (Pulse) =1 PW 100 Gain bandwidth product vs. emitter current VCE=-3V 100 PW 200 -2 COLLECTOR CURRENT : IC (A) Ta=25 C f=1MHz IC=0A 500 50 100 200 500 1000 EMITTER CURRENT : IE (mA) Collector-emitter saturation voltage vs. collector current 1000 10 20 DC EMITTER INPUT CAPACITANCE : Cib (pF) Fig.4 200 Grounded emitter output characteristics 500 Ta=25 C 20 -0.05mA IB=0mA 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 Fig.2 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -0.2 -0.1 -0.3mA 1000 -0.5 500 -0.4mA -0.6 Fig.1 Grounded emitter propagation characteristics -1 -0.45mA COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) -2 1000 -0.8 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Ta=25 C Ta=25 C DC CURRENT GAIN : hFE -100 -1.0 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25 C VCE=-5V COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -1000 -0.1 -0.05 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig. 8 Safe operating area (2SB1260) Any changes of specification will not be informed individually. Page 2 of 2