SECOS 2SB1260

2SB1260
-1 A, -80 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
4
High breakdown voltage and high current BVCEO=-80V, IC=-1A
Good hFE linearity
Complements to 2SD1898
1
A
2
B C 3
E
E
PACKAGE INFORMATION
B
D
Weight: 0.05 g (approximately)
F
G
H
Collector
24
1
A
B
C
D
E
F
Base
ZL
K
J
REF.
MARKING
C
3
Emitter
L
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-80
-80
-5
-1
0.5
150, -55~150
V
V
V
A
W
°C
PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
COB
-80
-80
-5
82
-
100
25
-1
-1
390
-0.4
-
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC= -1mA, IB=0
IE=-50μA, IC=0
VCB=-60V, IE=0
VEB=-4 V, IC=0
VCE=-3V, IC= -100mA
IC=-500mA, IB= -50mA
VCE=-5V, IC=-50mA, f=30MHz
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE2
http://www.SeCoSGmbH.com/
01-July-2007 Rev. A
Rank
Q
R
S
Range
82 - 180
120 - 270
180 - 390
Any changes of specification will not be informed individually.
Page 1 of 2
2SB1260
-1 A, -80 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
-10
-1
-0.1
0
-0.35mA
-0.25mA
IC/IB=20
10
-0.05
-0.02
-0.01
-1 -2
-0.2mA
-0.4
-0.15mA
-0.1mA
-0.2
200
100
50
20
10
5
2
1
-5 -10 -20 -50-100-200-500-1000-2000
Ta=25 C
VCE=-5V
1
2
5
COLLECTOR CURRENT : IC (mA)
Fig.5
-2
-5
-10
Fig. 7 Emitter input capacitance
vs. emitter-base voltage
http://www.SeCoSGmbH.com/
01-July-2007 Rev. A
1000
Ta=25 C
f=1MHz
IE=0A
500
200
100
50
20
10
5
2
1
-0.1 -0.2
-0.5 -1
-2
-5 -10 -20
-50 -100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6
Collector output capacitance
vs. collector-base voltage
-1 IC Max.
-0.5
-0.2
s
-1
DC current gain vs.
collector current
s
-0.5
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.3
m
10
-0.1 -0.2
-5 -10 -20 -50-100 -200-500-1000-2000
COLLECTOR CURRENT : IC (mA)
*
00
20
10
-1 -2
0m
=1
50
-1V
50
Ta=25 C
Single
nonrepetitive
pulse
IC Max. (Pulse)
=1
PW
100
Gain bandwidth product vs.
emitter current
VCE=-3V
100
PW
200
-2
COLLECTOR CURRENT : IC (A)
Ta=25 C
f=1MHz
IC=0A
500
50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Collector-emitter saturation
voltage vs. collector current
1000
10 20
DC
EMITTER INPUT CAPACITANCE : Cib (pF)
Fig.4
200
Grounded emitter output
characteristics
500
Ta=25 C
20
-0.05mA
IB=0mA
0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
Fig.2
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
-0.2
-0.1
-0.3mA
1000
-0.5
500
-0.4mA
-0.6
Fig.1 Grounded emitter propagation
characteristics
-1
-0.45mA
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
-2
1000
-0.8
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Ta=25 C
Ta=25 C
DC CURRENT GAIN : hFE
-100
-1.0
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Ta=25 C
VCE=-5V
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
-1000
-0.1
-0.05
-0.5
-1
-2
-5
-10
-20
-50 -100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig. 8 Safe operating area
(2SB1260)
Any changes of specification will not be informed individually.
Page 2 of 2