SECOS 2SD2150_09

2SD2150
3 A, 40 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
4
Excellent Current-to-Gain Characteristics
Low Collector Saturation Voltage,
VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A
1
2
3
A
E
C
Collector
B C
E
2
B
1
D
F
G
Base
H
3
K
J
L
Emitter
REF.
MARKING
A
B
C
D
E
F
CFR
CFS
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction & Storage Temperature
SYMBOL
RATINGS
UNIT
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
40
20
6
3
500
150, -55~150
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
*Pulse test: tP≦300µS, δ≦0.02
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE*
VCE(sat) *
fT*
COB
40
20
6
180
-
290
25
0.1
0.1
560
0.5
-
V
V
V
µA
µA
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=30V, IE=0
VEB=5 V, IC=0
VCE=2V, IC= 100mA
IC=2A, IB= 100mA
VCE=2V, IC=-500mA, f=100MHz
VCB=10V, IE=0, f=1MHz
V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
http://www.SeCoSGmbH.com/
6-Nov-2009 Rev. B
R
S
180-390
CFR
270-560
CFS
Any changes of specification will not be informed individually.
Page 1 of 2
2SD2150
Elektronische Bauelemente
3 A, 40 V
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
6-Nov-2009 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2