KTC3197 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Gain: Gpe=33dB(Typ.) (f=45MHz) Good Linearity of hFE 1Emitter 2Collector 3Base Collector 2 3 REF. Base A B C D E 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 30 25 4 50 625 150, -55~150 V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Collector Output Capacitance Collector-Base Time Constant Transition Frequency Power Gain http://www.SeCoSGmbH.com/ 26-Dec-2012 Rev. A Symbol Min. Typ. Max. Unit Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob CC • rbb fT Gpe 30 25 4 20 0.8 300 28 - 0.1 0.1 200 0.2 1.5 2 25 36 V V V µA µA IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 VCE=12.5V, IC=12.5mA IC=15mA, IB=1.5mA IC=15mA, IB=1.5mA VCB=10V, IE=0, f=1MHz VCB=10V, IE= -1mA, f=30MHz VCE=12.5V, IC=12.5mA VCE=12.5V, IE=12.5mA, f=45MHz V V pF pS MHz dB Any changes of specification will not be informed individually. Page 1 of 1