2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 Low noise High gain Power dissipation.(PC=150mW) A L 3 3 C B Top View 1 1 APPLICATIONS ● K 2 E 2 High frequency low noise amplifier. D F H G J CLASSIFICATION OF hFE Product-Rank 2SC4226-P 2SC4226-Q 2SC4226-R Range 40~80 70~140 125~250 Marking r23 r24 r25 REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 PACKAGE INFORMATION Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. REF. G H J K L Collector Package MPQ LeaderSize SOT-323 3K 7’ inch Base Emitter ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V IC 100 mA PC 150 mW TJ, TSTG +150, -65 ~ +150 ℃ Collector Current – Continuous Collector Power Dissipation Junction, Storage Temperature ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter V(BR)CBO 20 - - V IC=100μA, IE=0 Testing Condition Collector-emitter breakdown voltage V(BR)CEO 12 - - V IC=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 3 - - V IE=100μA, IC=0 Collector Cut-off Current ICBO - - 1 A VCB=10V, IE=0 Emitter Cut-off Current IEBO - - 1 A VEB=1V, IC=0 DC Current Gain hFE 40 110 250 fT 3.0 4.5 - Transition Frequency VCE=3V, IC=7mA GHz VCE=3V, IE=7mA Feed Back Capacitance Cre - 0.7 1.5 pF VCE=3V, IE=0, f=1MHz Noise Figure NF - 1.2 2.5 dB VCE=3V, IC=7mA, f=1GHz 24-Feb-2011 Rev. B Page 1 of 3 2SC4226 Elektronische Bauelemente 0.1A , 20V NPN Silicon Epitaxial Planar Transistor CHARACTERISTIC CURVES 24-Feb-2011 Rev. B Page 2 of 3 2SC4226 Elektronische Bauelemente 0.1A , 20V NPN Silicon Epitaxial Planar Transistor CHARACTERISTIC CURVES 24-Feb-2011 Rev. B Page 3 of 3