2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098 4 1 2 3 A E CLASSIFICATION OF hFE Product-Rank 2SB1386-P 2SB1386-Q 2SB1386-R Range 82~180 120~270 180~390 Marking BHP BHQ BHR C B D F G H K J PACKAGE INFORMATION REF. Package MPQ LeaderSize SOT-89 1K 7’ inch A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 1.2 0.89 0 L REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol Ratings Unit VCBO VCEO VEBO -30 -20 -6 -5 -10 V V V A(DC) A(Pulse) (1) 0.5 2 W (2) 150, -55~150 °C Collector Current -Continuous IC Collector Power Dissipation PD Junction & Storage Temperature TJ, TSTG Note: (1) Single pulse, Pw=10ms. (2) When mounted on a 40⋅40⋅0.7 mm ceramic board. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain * Transition frequency Output Capacitance Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -30 -20 -6 - 120 60 -0.5 -0.5 -1.0 390 - V V V μA μA V VCE(sat) - hFE fT COB 82 - MHz pF Test Conditions IC=-50µA IC= -1mA IE= -50µA VCB= -20V VEB= -5V IC/IB= -4A/-0.1A VCE= -2V, IC= -0.5A VCE= -6V, IE= -50mA, f=30MHz VCB= -20V, IE=0, f=1MHz * * ∗Measured using pulse current. http://www.SeCoSGmbH.com/ 10-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 2SB1386 Elektronische Bauelemente -5A, -30V PNP Silicon Low Frequency Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 10-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 2SB1386 Elektronische Bauelemente -5A, -30V PNP Silicon Low Frequency Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 10-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 3