2SD2403Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 D Features D1 A • This transistor is also available in the TO-223 case with the type designation PZT2403 E E1 • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. b1 b C L e e1 Mechanical Data Case: SOT-89 Plastic Package Weight: approx. 0.016g Marking Code: 156 Dimensions In Millimeters Symbol 1. BASE 2. COLLECTOR 3. EMITTER Dimensions In Inches Min Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 Maximum Ratings and Thermal Characteristics e e1 2.900 3.100 0.114 0.122 (TA = 25OC unless otherwise noted) L 0.900 1.100 0.035 0.043 Parameter 1.500TYP 0.060TYP Symbol Value Collector Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5.0 V IC IC A Ptot 3 6 1.0 RθJA 150 (1) Collector Current (DC) Collector Current (pulse) Power Dissipation at TA = 25°C Thermal Resistance Junction to Ambiant Air Junction Temperature Tj Storage Temperature Range TS Test Condition °C/W 150 °C °C f = 30MHz Electrical Characteristics (TJ = 25¡C unless otherwise noted) Symbol W –55 to +150 Notes: Device on alumina substrate. Parameter Unit Min Typ Max Unit Collector-Base Breakdown Voltage VCBO IC = 100uA, IE = 0 80 - - V Collector-Emitter Breakdown Voltage VCEO IC = 10mA, IB = 0 60 - - V Emitter-Base Breakdown Voltage VEBO IE = 100uA, IC = 0 5 - - V - - 100 nA Emitter Cotoff Current IEBO Collector Cutoff Current ICBO VCE = 4V, IC = 0 - - 100 nA VCE(sat)1 IC = 1A, IB = 0.1A - 0.12 0.2 V Collector-emitter Saturation Voltage 2 VCE(sat)2 IC = 3A, IB = 0.3A - 0.43 0.6 V Base-emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.25 V Base-emitter xxx Voltage VBE(on) IC = 1A, VCE = 2V - 0.8 1.0 V Collector-emitter Saturation Voltage 1 VCB = 60V, IE = 0 DC Current Gain 1 hFE1 VCE = 2V, IC = 50 mA 70 200 - DC Current Gain 2 hFE2 VCE = 2V, IC = 500 mA 100 200 300 DC Current Gain 3 hFE3 VCE = 2V, IC = 1 A 80 170 - DC Current Gain 4 hFE4 VCE = 2V, IC = 2 A 40 80 - 140 175 - - 45 - - 800 - - - 30 Gain-Bandwidth Product fT VCE = 5V, IC = 100 mA f=100MHz On-Time ton Off-Time toff VCC = 10V, IC = 500 mA IB1 = IB2 = 50mA Output Capacitance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Cob VCB = 10V, f = 2 MHz MHz ns pF Any changing of specification will not be informed individual Page 1 of 2 2SD2403Q Elektronische Bauelemente Collector Current (A) Collector Current (A) Collector Current (A) Collector Current (A) Collector Emitter Voltage (V) http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Plastic-Encapsulate Transistor Collector Current (A) Any changing of specification will not be informed individual Page 2 of 2