SECOS 2SD2403Q

2SD2403Q
Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-89
D
Features
D1
A
• This transistor is also available in the TO-223 case with the
type designation PZT2403
E
E1
• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
b1
b
C
L
e
e1
Mechanical Data
Case: SOT-89 Plastic Package
Weight: approx. 0.016g
Marking Code: 156
Dimensions In Millimeters
Symbol
1. BASE
2. COLLECTOR
3. EMITTER
Dimensions In Inches
Min
Max
Min
Max
A
1.400
1.600
0.055
0.063
b
0.320
0.520
0.013
0.020
b1
0.360
0.560
0.014
0.022
c
0.350
0.440
0.014
0.017
D
4.400
4.600
0.173
0.181
D1
1.400
1.800
0.055
0.071
E
2.300
2.600
0.091
0.102
E1
3.940
4.250
0.155
0.167
Maximum Ratings and Thermal Characteristics
e
e1
2.900
3.100
0.114
0.122
(TA = 25OC unless otherwise noted)
L
0.900
1.100
0.035
0.043
Parameter
1.500TYP
0.060TYP
Symbol
Value
Collector Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5.0
V
IC
IC
A
Ptot
3
6
1.0
RθJA
150 (1)
Collector Current (DC)
Collector Current (pulse)
Power Dissipation at TA = 25°C
Thermal Resistance Junction to Ambiant Air
Junction Temperature
Tj
Storage Temperature Range
TS
Test Condition
°C/W
150
°C
°C
f = 30MHz
Electrical Characteristics (TJ = 25¡C unless otherwise noted)
Symbol
W
–55 to +150
Notes: Device on alumina substrate.
Parameter
Unit
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
VCBO
IC = 100uA, IE = 0
80
-
-
V
Collector-Emitter Breakdown Voltage
VCEO
IC = 10mA, IB = 0
60
-
-
V
Emitter-Base Breakdown Voltage
VEBO
IE = 100uA, IC = 0
5
-
-
V
-
-
100
nA
Emitter Cotoff Current
IEBO
Collector Cutoff Current
ICBO
VCE = 4V, IC = 0
-
-
100
nA
VCE(sat)1
IC = 1A, IB = 0.1A
-
0.12
0.2
V
Collector-emitter Saturation Voltage 2
VCE(sat)2
IC = 3A, IB = 0.3A
-
0.43
0.6
V
Base-emitter Saturation Voltage
VBE(sat)
IC = 1A, IB = 0.1A
-
0.9
1.25
V
Base-emitter xxx Voltage
VBE(on)
IC = 1A, VCE = 2V
-
0.8
1.0
V
Collector-emitter Saturation Voltage 1
VCB = 60V, IE = 0
DC Current Gain 1
hFE1
VCE = 2V, IC = 50 mA
70
200
-
DC Current Gain 2
hFE2
VCE = 2V, IC = 500 mA
100
200
300
DC Current Gain 3
hFE3
VCE = 2V, IC = 1 A
80
170
-
DC Current Gain 4
hFE4
VCE = 2V, IC = 2 A
40
80
-
140
175
-
-
45
-
-
800
-
-
-
30
Gain-Bandwidth Product
fT
VCE = 5V, IC = 100 mA
f=100MHz
On-Time
ton
Off-Time
toff
VCC = 10V, IC = 500 mA
IB1 = IB2 = 50mA
Output Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Cob
VCB = 10V, f = 2 MHz
MHz
ns
pF
Any changing of specification will not be informed individual
Page 1 of 2
2SD2403Q
Elektronische Bauelemente
Collector Current (A)
Collector Current (A)
Collector Current (A)
Collector Current (A)
Collector Emitter Voltage (V)
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Plastic-Encapsulate Transistor
Collector Current (A)
Any changing of specification will not be informed individual
Page 2 of 2