BC847BV Dual NPN Transistors Elektronische Bauelemente Plastic-Encapsulate Transistors SOT-563 RoHS Compliant Product FEATURES (BC857BV) * Ultra-Small Surface Mount Package .002(0.05) .000(0.00) .051(1.30) .043(1.10) .012(0.30) .004(0.10) * Epitaxial Die Construction * Complementary PNP Type Available .022(0.55) .018(0.45) .067(1.70) .059(1.50) .011(0.27) .007(0.17) .067(1.70) .059(1.50) Marking:K4V .024(0.60) .021(0.525) 7o REF. .006(0.16) .004(0.09) 7o RE . MAXIMUM RATINGS* TA=25. Dimensions in inches and (millimeters) unless otherwise noted Symbol F Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.1 A 0.15 PC Collector Dissipation RθJA Thermal Resistance. Junction to Ambient Air 833 TJ Junction Temperature 150 o -55-150 o Storage Temperature Tstg ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise Test W o C/W C C specified) conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1µA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE(1) VCE=5V,IC=2mA Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage VBE Transition frequency fT Output capacitance Noise Figure http://www.SeCoSGmbH.com 23-Mar-2007 Rev. A Cob NF 200 450 IC=10mA,IB=0.5mA 100 IC=100mA,IB=5mA 300 IC=10mA,IB=0.5mA 700 IC=100mA,IB=5mA 900 VCE=5V,IC=2mA 580 VCE=5V,IC=10mA VCE=5V,IC=10mA,f= 100MHz VCB=10V,IE=0,f=1MHz VCE=5V,Rs=2kΩ, f=1kHz,BW=200Hz 660 mV mV 700 770 mV MHz 100 4.5 pF 10 dB Any changing of specification will not be informed individual Page 1 of 2 BC847BV Dual NPN Transistors Elektronische Bauelemente http://www.SeCoSGmbH.com 23-Mar-2007 Rev. A Plastic-Encapsulate Transistors Any changing of specification will not be informed individual Page 2 of 2