PZT159 PNP Silicon Planar High Current Transistor Elektronische Bauelemente RoHS Compliant Product Features * 5 Amps continuous current, up to 15 Amp peak current. SOT-223 0.95±0.05 f Mechanical Data ３．５６ f * Very low saturation voltage 0.25 C ±1° 12° Case: SOT-223 Plastic Package 0.30±0.03 R0.15 R0.15 0.55 * Excellent gain characteristic specified up to 10Amps. ±1° 12° f １．６±０．２ Weight: approx. 0.021g 1 E C Marking Code: 159 B Maximum Ratings and Thermal Characteristics 2 1. BASE 2. COLLECTOR 3. EMITTER 3 ±3° 6° (TA = 25 C unless otherwise noted) O Parameter Symbol Junction Temperature - Tj Value +150 Unit O O C C Storage Temperature Tstg -55 to +150 Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage V EBO -6 V Collector Current (DC) IC -5 A Collector Current (Pulse) IC A Total Power Dissipation PD -15 3.0 W Notes: Device on alumina substrate. Electrical Characteristic s (TJ = 25 C O Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (w/ Real Device Limit) Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current (w/ Real Device Limit) Emitter-Base Cutoff Current Collector Saturation Voltage 1 Collector Saturation Voltage 2 Collector Saturation Voltage 3 Collector Saturation Voltage 4 Base Saturation Voltage Base-Emitter Voltage DC Current Gain 1 DC Current Gain 2 DC Current Gain 3 DC Current Gain 4 Gain-Bandwidth Product Output Capacitance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A unless otherwise noted) Symbol BVCBO Min -100 Typ. - Max - Uni V Test Conditions I C=-100µA, I E=0 BVCER -100 - - V I C=-1µA, R B=1KΩ *BVCEO BVEBO I CBO -60 -6 - - -50 V V nA I C=-100mA, I B=0 I E=-100µA, IC=0 VCB=-80V, IE=0 I CER - - -50 nA VCB=-80V, R=1KΩ I EBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob 100 100 75 10 - -20 -85 -155 -370 -1.08 -0.935 200 200 90 25 120 74 -10 -50 -140 -210 -460 -1.24 -1.07 300 - nA mV mV mV mV V V VEB=-6V, IC=0 I C=-100mA, I B=-10mA I C=-1A, I B=-100mA I C=-2A, I B=-200mA I C=-5A, I B=-500mA I C=-5A, I B=-500mA VCE=-1V, I C=-5A VCE=-1V, I C=-10mA VCE=-1V, I C=-2A VCE=-1V, I C=-5A VCE=-1V, I C=-10A VCE=-10V, IC=-100mA, VCB=-10V, IE=0, f=1MHz MH pF Any changing of specification will not be informed individual Page 1 of 2 PZT159 PNP Silicon Planar High Current Transistor Elektronische Bauelemente On-Time Off-Time ton toff - 82 350 - ns VCC=-10V, IC=2A, I B1=I B2=-200mA *Measured under pulse condition. Pulse widthЉ Љ 300ȝs, Duty CycleЉ Љ 2% Spice parameter data is available upon request for this device. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2