SECOS BCP157

BCP157
PNP Silicon
Medium Power Transistor
Elektronische Bauelemente
RoHS Compliant Product
Features
SOT-89
1. -60Volt V CEO
2. 3 Amp continuous current
1.BASE
D
2.COLLECTOR
3. Low saturation voltage
D1
3.EMITTER
A
E
E1
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b1
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
-80
V
Collector-emitter voltage
VCEO
-60
V
Emitter-base voltage
VEBO
-5
V
b
IC
L
A(Pulse)∗1
-6
0.5
Total power
dissipation
e1
A(DC)
-3
Collector current
C
e
W
PC
2
∗2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
1.400
1.600
0.055
0.063
b
0.320
0.520
0.013
0.020
b1
0.360
0.560
0.014
0.022
c
0.350
0.440
0.014
0.017
D
4.400
4.600
0.173
0.181
D1
1.400
1.800
0.055
0.071
E
2.300
2.600
0.091
0.102
E1
3.940
4.250
0.155
1.500TYP
e
0.167
0.060TYP
e1
2.900
3.100
0.114
0.122
L
0.900
1.100
0.035
0.043
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
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Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
-80
−
−
V
IC=−100µA, IE=0
Collector-emitter breakdown voltage
BVCEO
-60
−
−
V
IC=−10mA, IB=0
Emitter-base breakdown voltage
Conditions
BVEBO
-5
−
−
V
IE=−100 µA, IC=0
Collector cutoff current
ICBO
−
−
0.1
µA
VCB=−60V, IE=0
Emitter cutoff current
IEBO
−
−
0.1
µA
VEB=−4V, IC=0
−
-150
-300
mV
IC=−1A,IB=-100mA
-450
-600
mV
IC=-3A,IB=-300mA
−
-0.9
-1.25
V
IC=-1A, IB=-100mA
Collector-emitter saturation voltage 1 VCE(sat)1
Collector-emitter saturation voltage 2 VCE(Sat)2
Base-emitter saturation voltage Sat
VBE(Sat)
Base-emitter saturation voltage On
VBE(On)
−
-0.8
-1.0
V
VCE=-2V, IC=-1A
Cob
−
−
30
pF
VCB=−10V, IE=0A, f=1MHz
Output capacitance
Current Gain - Bandwidth Product
Switching Time
Current Gain
fT
100
140
−
ton
−
40
−
toff
−
450
−
hFE1
70
200
hFE2
100
200
hFE3
80
170
VCE=-2V, IC=-1A
40
150
VCE=-2V, IC=-2A
hFE4
MHz
ns
VCE=−5V, IC=-100mA, f=100MHz
VCC=-10V, IC=-500mA,
IB1=IB2=-50mA
VCE=-2V, IC=-50mA
300
VCE=-2V, IC=-500mA
Note: Measured under pulse condition. Pulse width<300us, Duty cycle<2%
Spice parameter data is available upon urquest for this device.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
BCP157
Elektronische Bauelemente
PNP Silicon
Medium Power Transistor
Electrical characteristics curves
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2