BCP157 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product Features SOT-89 1. -60Volt V CEO 2. 3 Amp continuous current 1.BASE D 2.COLLECTOR 3. Low saturation voltage D1 3.EMITTER A E E1 z$EVROXWHPD[LPXPUDWLQJV7D °& b1 Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V b IC L A(Pulse)∗1 -6 0.5 Total power dissipation e1 A(DC) -3 Collector current C e W PC 2 ∗2 W Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C Dimensions In Millimeters Symbol Dimensions In Inches Min Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 1.500TYP e 0.167 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. z(OHFWULFDOFKDUDFWHULVWLFV7D °& Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO -80 − − V IC=−100µA, IE=0 Collector-emitter breakdown voltage BVCEO -60 − − V IC=−10mA, IB=0 Emitter-base breakdown voltage Conditions BVEBO -5 − − V IE=−100 µA, IC=0 Collector cutoff current ICBO − − 0.1 µA VCB=−60V, IE=0 Emitter cutoff current IEBO − − 0.1 µA VEB=−4V, IC=0 − -150 -300 mV IC=−1A,IB=-100mA -450 -600 mV IC=-3A,IB=-300mA − -0.9 -1.25 V IC=-1A, IB=-100mA Collector-emitter saturation voltage 1 VCE(sat)1 Collector-emitter saturation voltage 2 VCE(Sat)2 Base-emitter saturation voltage Sat VBE(Sat) Base-emitter saturation voltage On VBE(On) − -0.8 -1.0 V VCE=-2V, IC=-1A Cob − − 30 pF VCB=−10V, IE=0A, f=1MHz Output capacitance Current Gain - Bandwidth Product Switching Time Current Gain fT 100 140 − ton − 40 − toff − 450 − hFE1 70 200 hFE2 100 200 hFE3 80 170 VCE=-2V, IC=-1A 40 150 VCE=-2V, IC=-2A hFE4 MHz ns VCE=−5V, IC=-100mA, f=100MHz VCC=-10V, IC=-500mA, IB1=IB2=-50mA VCE=-2V, IC=-50mA 300 VCE=-2V, IC=-500mA Note: Measured under pulse condition. Pulse width<300us, Duty cycle<2% Spice parameter data is available upon urquest for this device. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 BCP157 Elektronische Bauelemente PNP Silicon Medium Power Transistor Electrical characteristics curves http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2