CZD1182 PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6. 50Ć0. 15 FEATURES 2. 30Ć0. 10 5. 30Ć0. 10 C 0. 51Ć0. 05 The CZD1182 is designed for medium power amplifier application 0. 51Ć0. 10 1. 20 0. 75Ć0. 10 0Ć0. 10 5 5 1. 60Ć0. 15 MARKING : 1182 (With Date Code) 0. 6 0. 80Ć0. 10 0. 60Ć 0. 10 2. 30Ć0. 10 B C E 2. 30Ć0. 10 0 Ć9 0. 51 2. 70Ć0. 20 9. 70Ć0. 20 RoHS Compliant Product 5. 50Ć0. 10 5 Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) * MAXIMUM RATINGS* TA=25 C unless otherwise noted O Symbol Parameter Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -2 A Collector Current -Pulse,Pw=100mS IC -3 A PC 10 W TJ, Tstg +150,-55~+150 ć Collector Dissipation Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Ic=-50µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE= -50µA, IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 uA Emitter cut-off current IEBO VEB=-4V,IC=0 -1 uA DC current gain hFE VCE=-3V,IC=-500mA Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range http://www.SeCoSGmbH.com 01-Jun-2006 Rev. A VCE(sat) Test conditions MIN TYP 82 MAX UNIT 390 IC=-2000mA,IB=-200mA -500 -800 mV VCE=-5V,Ic=500mA,f=100MHz 100 MHz VCB=-10V,f=1MHz 50 pF hFE P 82 - 180 Q 120 - 270 R 180 - 390 Any changing of specification will not be informed individual Page 1 of 2 CZD1182 Elektronische Bauelemente PNP Silicon General Purpose Transistor Electrical characteristic curves 01-Jun-2006 Rev. A Page 2of 2