SECOS PZT195

PZT195
PNP Silicon Planar
Medium Power Transistor
Elektronische Bauelemente
RoHS Compliant Product
Features
* -60 Voltage VCEO.
SOT-223
f f
f
Mechanical Data
C
fe
e
Case: SOT-223 Plastic Package
f
5
5
* 1 Amps continuous current.
* Complementary to PZT194
fe
e
f Weight: approx. 0.021g
f
E
Marking Code: 195
1
C
B
Maximum Ratings and Thermal Characteristics
2
1.
BASE
2.
COLLECTOR
3.
EMITTER
3
fe
e
O
(TA = 25 C unless otherwise noted)
Parameter
Symbol
Junction Temperature
Value
-
Tj
Unit
O
+150
O
C
C
Storage Temperature
Tstg
-55 to +150
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
V EBO
-5
V
Collector Current (DC)
IC
-1
A
Collector Current (Pulse)
IC
-0.2
A
PD
2.0
W
Total Power Dissipation
Notes: Device on alumina substrate.
Electrical Characteristics (TJ = 25 C
O
Parameter
unless otherwise noted)
Symbol
Min
Typ. Max
Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO
-80
-
-
V
IC=-100uA, IE=0
Collector-Emitter Breakdown Voltage
*BVCEO
-60
-
-
V
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO
-5
-
-
V
IE=-100uA, IC=0
Collector-Emmiter Breakdown Voltage
ICBO
-
-
-100
nA
VCB=-60V, IE=0
Collector-Base Cutoff Current
ICES
-
-
-100
nA
VCES=-60V
Emitter-Base Cutoff Current
IEBO
-
-
-100
nA
VEB=-4V, IC=0
Collector Saturation Voltage 1
*VCE(sat)1
-
-
-0.3
V
IC=-500mA, IB=-50mA
Collector Saturation Voltage 2
*VCE(sat)2
-
-
-0.6
V
IC=-1A, IB=-100mA
Base Saturation Voltage
*VBE(sat)
-
-
-1.2
V
IC=-1A, IB=-100mA
Base-Emitter Voltage
*VBE(on)
-
-
-1.0
V
VCE=-5V, IC=-1A
DC Current Gain 1
*hFE1
100
-
-
-
VCE=-5V, IC=1mA
DC Current Gain 2
*hFE2
100
-
300
-
VCE=-5V, IC=-500mA
DC Current Gain 3
*hFE3
80
-
-
-
VCE=-5V, IC=-1A
DC Current Gain 4
*hFE4
15
-
-
-
VCE=-5V, IC=-2A
Gain-Bandwidth Product
fT
150
-
-
MHz
Output Capacitance
Cob
-
-
10
pF
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
Any changing of specification will not be informed individual
Page 1 of 2
PZT195
Elektronische Bauelemente
PNP Silicon Planar
Medium Power Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2