2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier Emitter Collector Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D Range 60~120 100~200 160~320 A B E F C N L H M K D J Collector G REF. A B C D E F G Base Emitter Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC TJ, TSTG 35 35 5 2.5 750 150, -55~150 V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) hFE (2) VCE(sat) fT VBE 35 35 5 60 20 - 180 - 20 20 320 1 1.5 V V V μA μA V MHz V Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1.5A* IC=2A, IB=200mA VCE=2V, IC=200mA VCE=2V, IC=1.5A *Pulse test http://www.SeCoSGmbH.com/ 07-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 2SC1162 Elektronische Bauelemente 2.5A , 35V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 07-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2