BAV70W Dual Chips Common Cathode Surface Mount Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES . . . . A Fast Switching Speed L Surface Mount Package Ideally Suited for Automatic Insertion 3 For General Purpose Switching Applications 1 Top View B S 2 High Conductance V G ANODE 1 C 3 2 CATHODE ANODE H D J K MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR 70 V dc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Rating Peak Forward Surge Current SOT-323(SC-70) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C PD 200 mW 1.6 Thermal Resistance, Junction to Ambient R θJ A Total Device Dissipation Alumina S ubstrate,(2) AT=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 0.625 300 PD Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 mW/°C H 0.000 0.100 °C/W J 0.100 0.250 mW K 0.350 0.500 L 0.590 0.720 2.4 mW/°C S 2.000 2.400 R θJ A 417 °C /W V 0.280 0.420 T J , Tstg –55to+150 °C All Dimension in mm DEVICE MARKING B AV70W = A 4, KJA ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V (B R ) 70 — V dc — — 5.0 100 — 1.5 — — — — 715 855 1000 1250 OFF CHARACTERISTICS Revers e B reakdown Voltage (I( BR) = 100 .Adc) R evers e Voltage Leakage C urrent IR (V R = 70 V dc) (V R = 70 V dc, T J = 150°C ) uAdc Diode C apacitance (V R = 0, f = 1.0 MHz) CD F orward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) VF R evers e R ecovery Time (I F = I R = 10 mAdc, I R (R E C ) = 1.0 mAdc) (F igure 1) R L = 100 trr — 6.0 ns VR F — 1.75 V F orward R ecovery T ime (I F = 10 mAdc, t r = 20 ns ) (F igure 2) pF mV dc 1. FR…5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. 3. For each individual diode while the second diode is unbiased. http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 3 BAV70W Dual Chips Common Cathode Surface Mount Switching Diode Elektronische Bauelemente BAV70 RS = 50 Ω SAMPLING OSCILLOSCOPE RL = 50 Ω IF tr tp I 10% +IF trr 10%ĂOFĂ 90% VR OUTPUT PULSE VR 100ĂW INPUT PULSE Figure 1. Recovery Time Equivalent Test Circuit 1 KΩ 450 Ω RS = 50 Ω SAMPLING OSCILLOSCOPE RL = 50 Ω BAV70 I V 90% VFR 10% t tr http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B tp INPUT PULSE Figure 2. OUTPUT PULSE t Any changing of specification will not be informed individual Page 2 of 3 BAV70W Dual Chips Common Cathode Surface Mount Switching Diode Elektronische Bauelemente IF, FORWARD CURRENT (mA) 100 10 O TA = 855C O TA= 255 C 1.0 O TA= - 405C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 Figure 3. Forward Voltage 10 O IR , REVERSE CURRENT (µA) TA =1505 C O TA = 1255 C 1.0 TA = 855C O 0.1 O TA = 555C 0.01 O TA = 255C 0.001 0 10 20 30 40 VR, REV ERSE VOLTAGE (VOLTS) 50 Figure 4. Leakage Current CD, DIODE CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 0 2 4 6 8 VR, REV ERSE VOLTAGE (VOLTS) Figure 5. Capacitance http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 3 of 3