BAV99W Dual Series Chips Surface Mount Switching Diode Elektronische Bauelemente RoHS Compliant Product FEATURES A suffix of "-C" specifies halogen & lead-free A L Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion 3 B S Top View For General Purpose Switching Applications 1 2 High Conductance V G ANODE C ATHODE 1 C 3 2 SC-70 C ATHODE SOT-323 ANODE H D J K MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc Dim Min Max mAdc A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 Rating Peak Forward Surge Current IFM(surge) 500 SOT-323(SC-70) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW G 1.200 1.400 1.6 mW/°C H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 RqJA 625 °C/W PD 300 mW 2.4 mW/°C 417 °C/W RqJA TJ, Tstg – 65 to +150 All Dimension in mm °C DEVICE MARKING BAV99W = A7, KJG ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V(BR) 70 — Vdc — — — 30 2.5 50 — 1.5 — — — — 715 855 1000 1250 — 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω trr 1. FR– 5 = 1.0 X 0.75 X 0.062 in. http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B µAdc pF mVdc ns 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Any changing of specification will not be informed individual Page 1 of 2 BAV99W Dual Series Chips Surface Mount Switching Diode Elektronische Bauelemente 820 Ω +10 V 2.0 k tr 0.1 µF 100 µH tp IF IF t trr 10% t 0.1 µF 90% DUT 50 Ω Input Sampling Oscilloscopes 50 Ω Output Pulse Generator IR(REC) = 1.0 mA IR VR Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) Input Signal Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 100 TA = 85°C TA = 125°C 1.0 IR , Reverse Current (µA) IF, Forward Current (mA) (mA) TA = 150°C 10 TA = – 40°C 1.0 TA = 25°C TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 0 1.2 10 Figure 2. Forward Voltage 20 30 VR, Reverse Voltage (V) 40 50 Figure 3. Leakage Current CD, Diode Capacitance (pF) 0.68 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, Reverse Voltage (V) Figure 4. Capacitance http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 2 of 2