SECOS BAV74

BAV74
Surface Mount Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
·
·
·
·
A
Fast Switching Speed
L
Surface Mount Package Ideally Suited for
Automatic Insertion
3
For General Purpose Switching Applications
1
Top View
B S
2
High Conductance
ANODE
V
3
G
1
3
1
2
CATHODE
C
2
ANODE
H
D
Symbol
Value
Unit
Reverse Voltage
VR
50
Vdc
Forward Current
IF
200
mAdc
Rating
Peak Forward Surge Current, T=1s
T=1ms
SOT-23
0.5
IFM(surge)
Adc
1
T=1us
J
K
MAXIMUM RATINGS (EACH DIODE)
4
THERMAL CHARACTERISTICS
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
Symbol
Max
Unit
H
0.013
0.100
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
225
mW
J
0.085
0.177
1.8
mW/°C
K
0.450
0.600
0.890
1.020
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
L
S
2.100
2.500
PD
300
mW
V
0.450
0.600
Characteristic
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
All Dimension in mm
DEVICE MARKING
BAV74 = JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
V(BR)
50
—
Vdc
—
—
100
0.1
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 5 µAdc)
µAdc
Reverse Voltage Leakage Current
(VR = 50 Vdc, TJ = 125°C)
(VR = 50 Vdc)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
—
2.0
Forward Voltage
(IF = 100 mAdc)
VF
—
1
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Ω
trr
—
4.0
1. FR– 5 = 1.0 X 0.75 X 0.062 in.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
pF
Vdc
ns
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Any changing of specification will not be informed individual
Page 1 of 2
BAV74
Surface Mount Switching Diode
Elektronische Bauelemente
820 Ω
+10 V
2.0 k
tr
0.1 µF
100 µH
tp
IF
IF
t
trr
10%
t
0.1 µF
90%
DUT
50 Ω Input
Sampling
Oscilloscopes
50 Ω Output
Pulse
Generator
IR(REC) = 1.0 mA
IR
VR
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
Input Signal
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
Curves Applicable to Each Anode
10
100
TA = 150°C
TA = 125°C
1.0
IR , Reverse Current (µA)
IF, Forward Current (mA)
TA = 85°C
10
TA = – 40°C
1.0
TA = 25°C
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.6
0.8
VF, Forward Voltage (V)
0.4
1.0
0
1.2
Figure 2. Forward Voltage
20
30
VR, Reverse Voltage (V)
40
50
Figure 3. Leakage Current
102
1.0
0.9
10
IFSM (A)
CD, Diode Capacitance (pF)
10
0.8
1
0.7
0.6
10-10
0
2
4
VR, Reverse Voltage (V)
Figure 4. Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
6
8
1
10
102
103
104
tp(uS)
Figure 5. Forward Surge
Any changing of specification will not be informed individual
Page 2 of 2