BD438/BD440/BD442 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product Features TO-126 A suffix of "-C" specifies halogen & lead-free * Amplifier and switching applications 2.0±0.2 4.14±0.1 o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Parameter Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Value BD438 -45 BD440 -60 BD442 -80 BD438 -45 BD440 -60 BD442 -80 1.4±0.1 1 Collector Current –Continuous -4 A PC Collector Dissipation 1.25 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ V(BR)CEO Test VCB=-45V, IE=0 VCB=-60V, IE=0 VCB=-80V, IE=0 Emitter cut-off current IEBO VEB=-5V, IC=0 hFE(3) Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A specified) MIN conditions IC=-100mA, IB=0 ICBO hFE(2) otherwise IC=-100µA, IE=0 Collector cut-off current DC current gain 0.5±0.1 1: Emitter 2: Collector 3: Base unless IE=-100µA, IC=0 hFE(1) 4.55±0.1 Dimensions in Millimeters V(BR)EBO Emitter-base breakdown voltage 0.76±0.1 2.28 Typ. IC Collector-emitter breakdown voltage 1.27±0.1 V V V(BR)CBO 3 15.3±0.2 -5 Collector-base breakdown voltage 2 V Emitter-Base Voltage Symbol O3.2±0.1 O2.8±0.1 11.0±0.2 Units VEBO Parameter 3.2±0.2 8.0±0.2 BD438 BD440 BD442 -45 BD438 BD440 BD442 -45 TYP MAX -60 V -80 -60 V -80 -5 BD438 BD440 BD442 V -0.1 µA -1 µA BD438 BD440 BD442 30 VCE=-1V, IC=-500mA BD438 BD440/BD442 85 375 40 475 VCE=-1V, IC=-2A 40 VCE=-5V, IC=-10mA IC=-3A, IB=-300mA VCE=-1V, IC=-2A BD438 BD440 BD442 20 15 25 15 BD438 BD440/BD442 -0.7 BD438 BD440/BD442 -1.1 VCE=-1V, IC=-250mA, f=1MHz UNIT -0.8 -1.5 3 V V MHz Any changing of specification will not be informed individual Page 1 of 2 BD438/BD440/BD442 Elektronische Bauelemente Typical Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A PNP Type Plastic Encapsulate Transistors BD438,440,442 Any changing of specification will not be informed individual Page 2of 2