2SC2411 NPN Transistor Plastic-Encapsulate Transistors Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3 Collector FEATURES 1 Base n n 2 Power Dissipation o PCM: 200 mW ( Tamb= 25 C) Emitter A RoHS Compliant Product L K 3 B S Top View 1 V J 2 C G H D Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Dim Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 200 mW TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Symbol Parameter unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA,IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 1 µA Emitter cut-off current IEBO VEB=4V,IC=0 1 µA DC current gain hFE VCE=3V,IC=100mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 82 390 IC=500mA,IB=50mA 0.4 V VCE=5V,IC=20mA,f=100MHz 250 MHz VCB=10V,IE=0,f=1MHz 6.0 pF hFE P Q R 82-180 120-270 180-390 CP CQ CR Any changing of specification will not be informed individual Page 1 of 2 2SC2411 Elektronische Bauelemente Typical characteristics http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Transistor Plastic-Encapsulate Transistors 2SC2411 Any changing of specification will not be informed individual Page 2 of 2