2SB1198K PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A L S 2 FEATURES 3 Top View Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 B 1 D G Power dissipation : 0.2 W PCM Collector current ICM : -0.5 A * Collector-base voltage V V(BR)CBO : -80 Operating and storage junction temperature range TJ Tstg: -55 to +150 J C K H 3 2 D 0.35 0.50 G 1.70 2.30 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 1.25 1.65 S 2.25 3.00 All Dimension in mm 1 COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS Parameter Tamb=25 Symbol unless otherwise specified Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50 A,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO Ic=-2mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-50 A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 A DC current gain hFE(1) VCE=-3V,IC=-100mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT 120 390 IC=-500mA,IB=-50mA -0.5 VCE=-10V,IC=-50mA Cob VCB=-10V,IE=0,f=1MHz V 180 MHz 11 pF CLASSIFICATION OF hFE(1) Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Q R 120-270 180-390 Any changing of specification will not be informed individual Page 1 of 2 2SB1198K Elektronische Bauelemente PNP Silicon General Purpose Transistor Electrical characteristic curves 01-Jun-2002 Rev. A Page 2 of 2