S9013 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 3.040 B 1.200 1.400 C 0.890 1.110 2 Emitter L 3 Tj, Tstg : - 55 C ~ + 150 C B S Top View Operating & storage junction temperature O Max 2.800 Base A V(BR)CBO : 40 V Min A 1 2 PCM : 0.3 W Collector Current ICM : 0.5 A Collector-base voltage Dim 1 2 O V G H 0.370 0.500 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm C D D G J K ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) O Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO MIN TYP MAX UNIT 40 V Ic= 0.1mA， IB=0 25 V IE=100μA， IC=0 5 V IE=0 Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=20V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , 0.1 μA HFE(1) VCE=1V, IC= 50m A 120 HFE(2) VCE=1V, IC=500mA 40 IC=0 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50m A 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50m A 1.2 V VCE=6V, fT Transition frequency IC= 20mA 150 MHz f=30MHz CLASSIFICATION OF h FE(1) http://www.SeCoSGmbH.com 01-Jun-2005 Rev.B Ｌ Ｈ １２０－２００ ２００－３５０ Any changing of specification will not be informed individual Page 1 of 1