BCX19 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES PCM : 0.225 W (Tamb=25 C) Collector Current 1. 0 ICM : 0.5 A Collector-base voltage 2. 4 1. 3 V(BR)CBO : 50 V Operating & storage junction temperature Tj, Tstg : - 55 C ~ + 150 C RoHS Compliant Product O 0. 95 0. 4 O n 2 Emitter 0. 95 n Base 2 2. 9 n 1 1 Power dissipation O n 3 3 1. 9 n Collector Unit: m i l l i m e t e r ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) o Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 10µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic =10 mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA Collector cut-off current ICEO VCE=20V, IB=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 10 µA DC current gain hFE VCE=1V, IC=100mA Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.62 V Base-emitter saturation voltage VBE(on ) I C=500mA,VCE=1V 1.2 V MARKING http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 100 600 BCX19 = U1 Any changing of specification will not be informed individual Page 1 of 1