MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size REF. SOT-523 3K 7 inch A B C D G J Millimeter Min. Max. 1.50 1.70 0.75 0.95 0.60 0.80 0.23 0.33 0.50BSC 0.10 0.20 REF. K M N S Millimeter Min. Max. 0.30 0.50 o --10 o --10 1.50 1.70 Collector 3 1 Base 2 Emitter MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Emitter Voltage VCEO 40 V Collector - Base Voltage VCBO 75 V Emitter - Base Voltage VEBO 6 IC 600 V mA Collector Current - Continuous Total Device Dissipation FR-4 Board @ TA=25°C Thermal Resistance, Junction to Ambient Junction & Storage Temperature 1 PD 150 mW RθJA 833 °C / W TJ, TSTG -55~150 °C Note: 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. http://www.SeCoSGmbH.com/ 17-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 5 MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Characteristic Symbol Min. Max. Unit Test Conditions Off Characteristics Collector-Emitter Breakdown Voltage 1 V(BR)CEO 40 - V IC=10 mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO 75 - V IC=10µA, IE=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 - V IE= -10 µA, IC=0 Collector Cut-Off Current IBL - 20 nA VCE=60V, VEB=3V Emitter Cut-Off Current ICEX - 100 nA VCE=60V, VBE=3V 1 On Characteristics 1 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage hFE VCE(sat) VBE(sat) 35 - IC=0.1mA, VCE=10V 50 - IC=1mA, VCE=10V 75 - IC=10mA, VCE=10V 100 - IC=150mA, VCE=10V 40 - IC=500mA, VCE=10V - 0.3 IC=150mA, IB=15mA V - 1 0.6 1.2 IC=500mA, IB=50mA IC=150mA, IB=15mA V - 2 IC=500mA, IB=50mA Small-Signal Characteristics VCE=20V, IC=20mA, f=100MHz fT 250 - MHz Output Capacitance Cobo - 8 pF VCB=10V, IE=0, f =1.0 MHz Input Capacitance Cibo - 30 pF VBE=0.5V, IE=0, f =1.0 MHz Input Impedancen hie 0.25 1.25 KΩ Curren-Gain-Bandwidth Product X10 -4 VCE=10V, IC=10mA, f=1.0kHz Voltage Feedback Ratio hre - 4 VCE=10V, IC=10mA, f=1.0kHz Small-Signal Current Gain hfe 75 375 VCE=10V, IC=10mAdc, f=1.0kHz Output Admittance hoe 25 200 µmhos VCE=10V, IC=10mAdc, f=1.0kHz Noise Figure NF - 4.0 dB VCE=10V, IC=100µA, RS=1KΩ, f=1.0kHz nS VCC=3V, VBE= -0.5 V, IC=150mA, IB1=15mA nS VCC=30V, IC=150mA, IB1=IB2=15mA Switching Characteristics Delay Time Td - 10 Rise Time Tr - 25 Storage Time TS - 225 Fall Time TF - 60 Note: 1. Pulse Test: Pulse Width ≤ 300s, Duty Cycle ≤ 2.0%. http://www.SeCoSGmbH.com/ 17-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 5 MMBT2222AT Elektronische Bauelemente NPN Silicon General Purpose Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 17-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 5 MMBT2222AT Elektronische Bauelemente NPN Silicon General Purpose Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 17-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 5 MMBT2222AT Elektronische Bauelemente NPN Silicon General Purpose Transistors CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 17-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 5 of 5