MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION A General switching and amplification. L 3 3 C B Top View 1 1 2 K E 2 PACKAGING DIMENSION D F G H J Collector Base REF. A Emitter Millimeter REF. Min. Max. 2.80 3.00 G Millimeter Min. Max. 0.10 REF. B 2.25 2.55 H C 1.20 1.40 J 0.55 REF. D 0.90 1.15 K 0.5 REF. E 1.80 2.00 L 0.95 TYP. F 0.30 0.50 0.08 0.15 MARKING ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) SYMBOL RATINGS UNIT Collector - Emitter Voltage PARAMETER VCEO 40 Vdc Collector - Base Voltage VCBO 60 Vdc Emitter - Base Voltage VEBO 6.0 Vdc IC 200 mAdc Collector Current - Continuous (1) Total Device Dissipation FR-5 Board , TA=25°C Total Device Dissipation FR-5 Board, Derate above 25°C Thermal Resistance, Junction to Ambient PD RθJA (2) Total Device Dissipation Alumina Substrate , TA=25°C Total Device Dissipation Alumina Substrate, Derate above 25°C Thermal Resistance, Junction to Ambien Junction, Storage Temperature http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. C 225 mW 1.8 mW/°C 556 °C / W 300 mW 2.4 mW/°C RθJA 417 °C / W TJ, TSTG -55 ~ +150 °C PD Any changes of specification will not be informed individually. Page 1 of 6 MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(Continued) PARAMETER SYMBOL MIN. MAX. UNIT TEST CONDITIONS OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (3) V(BR)CEO 40 - Vdc IC= 1mAdc, IB=0 Collector-Base Breakdown Voltage V(BR)CBO 60 - Vdc IC = 10μAdc, IE = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 - Vdc IE = 10μAdc, IC=0 Base Cut-Off Current IBL - 50 nAdc VCE= 30Vdc, VEB= 3.0Vdc Collector Cut-Off Current ICEX - 50 nAdc VCE= 30Vdc, VEB= 3.0Vdc ON CHARACTERISTICS DC Current Gain (3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (3) (3) hFE(1) 40 - IC= 0.1mAdc, VCE= 1Vdc hFE(2) 70 - IC= 1.0mAdc, VCE= 1Vdc hFE(3) 100 300 IC= 10mAdc, VCE= 1Vdc hFE(4) 60 - IC= 50mAdc, VCE= 1Vdc hFE(5) 30 - IC= 100mAdc, VCE= 1Vdc - 0.2 VCE(sat) VBE(sat) - 0.3 0.65 0.85 - 0.95 Vdc Vdc IC= 10mAdc, IB =1mAdc IC = 50mAdc, IB = 5mAdc IC= 10mAdc, IB =1mAdc IC = 50mAdc, IB =5mAdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product fT 300 - MHz Output Capacitance Cobo - 4.0 pF VCB=5.0Vdc, IE=0, f=1.0MHz IC= 10mAdc, VCE= 20Vdc, f=100MHz Input Capacitance Cibo - 8.0 pF VEB= 0.5Vdc, IC=0, f=1.0MHz Input Impedance hie 1.0 10 kΩ Voltage Feedback Radio hre 0.5 8.0 x 10 Small-Signal Current Gain hfe 100 400 Output Admittance Hoe 1.0 40 Noise Figure NF - 5.0 VCE= 10 Vdc, IC= 1.0mAdc, f=1.0kHz -4 VCE= 10 Vdc, IC= 1.0mAdc, f=1.0kHz VCE= 10 Vdc, IC= 1.0mAdc, f=1.0kHz μmhos VCE= 10 Vdc, IC= 1.0mAdc, f=-1.0kHz dB VCE= 5.0 Vdc, IC= 100μAdc, RS=1.0KΩ, f=1.0kHz SWITCHING CHARACTERISTICS Delay Time td - 35 Rise Time tr - 35 Storage Time ts - 200 Fall Time tf - 50 VCC=3Vdc,VBE=-0.5Vdc nS IC=10mAdc, IB1 =1mAdc VCC=3Vdc, IC=10mAdc,IB1= IB2=1mAdc NOTE: 1. FR-5=1.0 x 0.75 x 0.062 in. 2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≦ 300μS, Duty Cycle ≦ 2.0% http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. C Any changes of specification will not be informed individually. Page 2 of 6 MMBT3904 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. C 200 mA, 40 V NPN Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page 3 of 6 MMBT3904 Elektronische Bauelemente 200 mA, 40 V NPN Plastic Encapsulated Transistor TYPICAL TRANSIENT CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. C Any changes of specification will not be informed individually. Page 4 of 6 MMBT3904 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. C 200 mA, 40 V NPN Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page 5 of 6 MMBT3904 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. C 200 mA, 40 V NPN Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page 6 of 6