SECOS CZD5103

CZD5103
NPN Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
D-Pack (TO-252)
DESCRIPTION
The CZD5103 is designed for high speed switching applications.
FEATURES

Low saturation voltage, typically VCE(sat)= 0.15V at IC/IB= 3A/0.15A

High speed switching, typically Tf = 0.1s at IC= 3A

Wide SOA

Complements to CZD1952
A
B
C
D
GE
K
M
HF
N
O
P
J
Collector
MARKING

5103

REF.
A
B
C
D
E
F
G
H

Date Code
Base

Emitter
1
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
SWITCHING TIME TEST CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Device Dissipation
(TA=25°C)
Total Device Dissipation
(TC=25°C)
Junction Temperature
Storage Temperature
http://www.SeCoSGmbH.com/
23-Apr-2010 Rev. A
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
IC
100
60
5
6
20
V
V
V
A
A
PD
1
W
PD
10
W
TJ
TSTG
150
-55 ~ 150
℃
℃
Any changes of specification will not be informed individually.
Page 1 of 4
CZD5103
NPN Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min. Typ. Max. Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
100
-
-
V
IC=50　A, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
60
-
-
V
IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
V
IE=50　A, IC=0
Collector cut-off current
ICBO
-
-
10
A
VCB=100V, IE=0
Emitter cut-off current
IEBO
-
-
10
A
VEB=5V, IC=0
*VCE(sat)1
-
0.15
0.3
V
IC=3A, IB=0.15A
*VCE(sat)2
-
-
0.5
V
IC=4A, IB=0.2A
*VBE(sat)1
-
-
1.2
V
IC=3A, IB=0.15A
*VBE(sat)2
-
-
1.5
V
IC=4A, IB=0.2A
*hFE1
120
-
270
VCE=2V, IC=1A
*hFE2
40
-
-
VCE=2V, IC=3A
Transition frequency
fT
-
210
-
MHz
Output Capacitance
COB
-
80
-
pF
VCE=10V, IE=0, f=1MHz
Turn-On Time
TON
-
-
0.3
Storage Time
TSTG
-
-
1.5
S
IC=3A, RL=10Ω,
IB1=-IB2=0.15A, VCC=30V
Tf
-
0.1
0.3
Collector-emitter saturation voltage
Base-emitter saturation voltage
*DC current gain
Fall Time
VCB=10V, IE=-0.5A,
f=30MHz
*Measured under pulse condition. Pulse width≦300μs, Duty Cycle≦2%
http://www.SeCoSGmbH.com/
23-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
CZD5103
Elektronische Bauelemente
NPN Epitaxial Planar Silicon Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
23-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
CZD5103
Elektronische Bauelemente
NPN Epitaxial Planar Silicon Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
23-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4