MMBTA94 PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44 4D 1 K 2 E 2 D F H G J SYMBOL REF. Collector A B C D E F Base Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 Emitter MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature SYMBOL RATINGS UNIT VCBO VCEO VEBO IC PC TJ, TSTG -400 -400 -5 -0.1 350 150, -55~150 V V V A mW ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition frequency *Pulse test http://www.SeCoSGmbH.com/ 15-Oct-2010 Rev. A TEST CONDITIONS IC =100µA, IE =0 IC = -1mA, IB =0 IE = -100µA, IC =0 VCB = -400V, IE =0 VEB = -4V, IC =0 VCE = -10V, IC = -1mA VCE = -10V, IC = -10mA VCE = -10V, IC = -50mA VCE = -10V, IC = -100mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA IC = -10mA, IB = -1mA VCE = -20V, IC = -10mA SYMBOL MIN. TYP. MAX. UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1* hFE2* hFE3* hFE4* VCE(sat)1* VCE(sat)2* VBE(sat)* fT -400 -400 -5 70 80 40 40 50 - -0.1 -0.1 300 -0.2 -0.3 -0.75 - V V V µA µA V V V MHz Any changes of specification will not be informed individually. Page 1 of 2 MMBTA94 Elektronische Bauelemente PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Oct-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2