MMBTA05 NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-23 The MMBTA05 is Amplifier Transistor A L FEATURES 3 3 Driver Transistor 1 1 2 K E 2 D MARKING F G H J Collector C A B C D E F Base E Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. 1H B C B Top View REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 Emitter MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissapation Junction, Storage Temperature SYMBOL RATINGS UNIT VCBO VCEO VEBO IC PC TJ, TSTG 60 60 4 0.5 300 150, -55~150 V V V A mW ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency http://www.SeCoSGmbH.com/ 26-Oct-2009 Rev. C TEST CONDITIONS IC =100µA, IE =0 IC =1mA, IB =0 IE =100µA, IC =0 VCB =60V, IE =0 VCE =60V, IB =0 VEB =3V, IC =0 VCE =1V, IC =10mA VCE =1V, IC =100mA IC =100mA, IB =10mA VCE =1V, IC=100mA VCE =2V, IC=10mA,f=100MHz SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 hFE2 VCE(sat) VBE FT 60 60 4 100 100 MAX. 0.1 0.1 0.1 400 0.25 1.2 100 UNIT V V V µA µA µA V V MHz Any changes of specification will not be informed individually. Page 1 of 2 MMBTA05 Elektronische Bauelemente NPN Silicon Epitaxial Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 26-Oct-2009 Rev. C Any changes of specification will not be informed individually. Page 2 of 2