MMBTA44 NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44 3D 1 K 2 E 2 D F H G J SYMBOL REF. Collector A B C D E F Base Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 Emitter MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature SYMBOL RATINGS UNIT VCBO VCEO VEBO IC PC TJ, TSTG 500 400 6 0.1 350 150, -55~150 V V V A mW ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Input Capacitance *Pulse test http://www.SeCoSGmbH.com/ 21-Sep-2010 Rev. B TEST CONDITIONS IC =100µA, IE =0 IC =1mA, IB =0 IE =10µA, IC =0 VCB =400V, IE =0 VEB =4V, IC =0 VCE =10V, IC =1mA VCE =10V, IC =10mA VCE =10V, IC =50mA VCE =10V, IC =100mA IC =1mA, IB =0.1mA IC =10mA, IB =1mA IC =50mA, IB =5mA IC =10mA, IB =1mA VCB =20V, IE =0, f=1MHz VEB =0.5V, IC =0, f=1MHz SYMBOL MIN. TYP. MAX. UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1* hFE2* hFE3* hFE4* VCE(sat)1* VCE(sat)2* VCE(sat)3* VBE(sat)* Cobo Cibo 500 400 6 40 50 45 40 - - 0.1 0.1 200 0.4 0.5 0.75 0.75 7 130 V V V µA µA V V V V pF pF Any changes of specification will not be informed individually. Page 1 of 2 MMBTA44 Elektronische Bauelemente NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Sep-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 2