BCX70J NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A Low Current Low Voltage 3 C B Top View 1 Collector 1 K MARKING : AJ L 3 2 E 2 D F G H J Base REF. A B C D E F Emitter Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissapation Junction, Storage Temperature SYMBOL RATINGS UNIT VCBO VCEO VEBO IC PC TJ, TSTG 45 45 5 200 250 150, -55~150 V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector Output Capacitance Noise Figure Gain-Bandwidth Product http://www.SeCoSGmbH.com/ 26-Oct-2009 Rev. B TEST CONDITIONS IC=10µA, IE =0 IC=2mA, IB =0 IE=1µA, IC =0 VCE=45V, VBE =0 VCE=5V, IC=10µA VCE=5V, IC=2mA VCE=1V, IC=50mA IC =10mA, IB =0.25mA IC =50mA, IB =1.25mA IC=10mA, IB=-0.25mA IC=50mA, IB=1.25mA VCE=5V, IC=2mA VCB=10V, IE =0, f =1MHz VCE=5V,IC=200µA,f=1KHZ, BW=200HZ,RS=2KΩ VCE =5V, IC=10mA,f=100MHz SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE1 hFE2 hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE COB 45 45 5 TYP. 30 250 90 0.05 0.1 0.6 0.7 0.55 UNIT 20 V V V nA 460 0.35 0.55 0.85 1.05 0.75 1.7 NF FT MAX. 6 100 250 V V V V V pF dB MHz Any changes of specification will not be informed individually. Page 1 of 3 BCX70J Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 26-Oct-2009 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 BCX70J Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 26-Oct-2009 Rev. B Any changes of specification will not be informed individually. Page 3 of 3