MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. FEATURE SOT-363 Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching MARKING A E 6 5 4 C2 B1 E1 . L B F . 46 C 2 3 E2 B2 C1 J K DG 1 H REF. E1, B1, C1 = PNP3906 E2, B2, C2 = NPN3904 A B C D E F Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. ABSOLUTE MAXIMUM RATINGS OF NPN3904 at Ta = 25°C SYMBOL VALUE UNITS Collector to Base Voltage PARAMETER VCBO 60 V Collector to Emitter Voltage VCEO 40 V Emitter to Base Voltage VEBO 5 V Collector Currrent – Continuous IC 0.2 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~150 ℃ -$SU-2010 Rev. E Page 1 of 5 MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS OF NPN 3904 at Ta = 25°C CHARACTERISTIC TEST CONDITION SYMBOL MIN. Collector-Base Breakdown Voltage IC=10μA, IE=0 V(BR)CBO 60 V Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0 V(BR)CEO 40 V Emitter-Base Breakdown Voltage IE=10μA, IC=0 V(BR)EBO 5 V Collector Cutoff Current VCB=30V, IE=0 ICBO 0.05 μA Collector Cutoff Current VEB=30V, IB=0 ICEO 0.5 μA Emitter Cutoff Current VEB=5V, IC=0 IEBO 0.05 μA VCE=1V, IC=0.1mA hFE(1) 40 VCE=1V, IC=1mA hFE(2) 70 VCE=1V, IC=10mA hFE(3) 100 VCE=1V, IC=50mA hFE(4) 60 VCE=1V, IC=100mA hFE(5) 30 IC=10mA, IB=1mA VCE(sat)1 0.2 V IC=50mA, IB=5mA VCE(sat)2 0.3 V IC=10mA, IB=1mA VBE(sat)1 0.85 V IC=50mA, IB=5mA VBE(sat)2 0.95 V Output Capacitance VCB=5V, IE=0, f=1MHz Cob 4 pF Transition Frequency VCE=20V, IC=20mA, f=100MHz fT Noise Figure VCE=5V, IC=0.1mA, f=1kHz Rg=1KΩ, NF 5 dB VCC=3V, VBE=0.5V, IC=10mA, IB1=- IB2 = 1mA Td 35 nS Tr 35 nS VCC=3V, IC=10mA, IB1=- IB2 = 1mA Ts 200 nS Tf 50 nS DC Current Gain Collector-emitter Saturation Voltage Base-Emitter Saturation Voltage Delay TIme Rise Time Storage Time Fall Time MAX. UNIT 300 0.65 300 MHz ABSOLUTE MAXIMUM RATINGS OF PNP 3906 at Ta = 25°C PARAMETER SYMBOL VALUE UNITS Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -40 V Emitter to Base Voltage VEBO -5 V Collector Currrent – Continuous IC -0.2 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~150 ℃ 14-Apr-2010 Rev. E Page 2 of 5 MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS OF PNP 3906 at Ta = 25°C CHARACTERISTIC TEST CONDITION SYMBOL MIN. Collector-Base Breakdown Voltage IC=-10μA, IE=0 V(BR)CBO -40 V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 V(BR)CEO -40 V Emitter-Base Breakdown Voltage IE=-10μA, IC=0 V(BR)EBO -5 V Collector Cutoff Current VCB=-30V, IE=0 ICBO -0.05 μA Emitter Cutoff Current VEB=-5V, IC=0 IEBO -0.05 μA VCE=-1V, IC=-0.1mA hFE(1) 60 VCE=-1V, IC=-1mA hFE(2) 80 VCE=-1V, IC=-10mA hFE(3) 100 VCE=-1V, IC=-50mA hFE(4) 60 VCE=-1V, IC=-100mA hFE(5) 30 IC=-10mA, IB=-1mA VCE(sat)1 -0.25 V IC=-50mA, IB=-5mA VCE(sat)2 -0.4 V IC=-10mA, IB=-1mA VBE(sat)1 -0.85 V IC=-50mA, IB=-5mA VBE(sat)2 -0.95 V Collector Output Capacitance VCB=-5V, IE=0, f=1MHz Cob 4.5 pF Transition Frequency VCE=-20V, IC=-10mA, f=100MHz fT Noise Figure VCE=-5V, IC=-0.1mA, f=1kHz Rg=1KΩ, NF 4 dB VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=- IB2 = -1mA Td 35 nS Tr 35 nS VCC=-3V, IC=-10mA, IB1=- IB2 = -1mA Ts 225 nS Tf 75 nS DC Current Gain Collector-emitter Saturation Voltage Base-Emitter Saturation Voltage Delay TIme Rise Time Storage Time Fall Time 14-Apr-2010 Rev. E -0.65 MAX. UNIT 300 250 MHz Page 3 of 5 MMDT3946 Elektronische Bauelemente NPN / PNP Multi-Chip Transistor CHARACTERISTIC CURVES 14-Apr-2010 Rev. E Page 4 of 5 MMDT3946 Elektronische Bauelemente NPN / PNP Multi-Chip Transistor CHARACTERISTIC CURVES 14-Apr-2010 Rev. E Page 5 of 5