MMBT5551W NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE A L Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version Complementary to MMBT5401W 3 3 C B Top View 1 1 K 2 E 2 D Collector 3 MARKING: K4N F G REF. 1 A B C D E F Base 2 Emitter Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H J REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal Resistance, Junction to Ambient Opterating & Storage Temperature SYMBOL RATINGS UNIT VCBO VCEO VEBO IC PC RθJA TJ, TSTG 180 160 6 200 200 625 150, -55 ~ 150 V V V mA mW °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Noise Figure 01-Dec-2009 Rev. A SYMBOL MIN V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob 180 160 6 NF 80 80 30 100 MAX UNIT 50 50 V V V nA nA 250 0.15 0.2 1 1 300 6 V V V V MHz pF 8 dB TEST CONDITION IC=100µA, IE=0 IC = 1mA, IB = 0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=5V, IC=0.2mA, f=1KHz, RS=1KΩ Page 1 of 2 MMBT5551W Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor CHARACTERISTIC CURVES 01-Dec-2009 Rev. A Page 2 of 2