S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 Ω N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ♦ ♦ ♦ ♦ ♦ ♦ SOT-323 Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Low input/output leakage Ultra-small surface mount package A L 3 3 C B Top View 1 1 2 K E 2 D PACKAGE INFORMATION Drain 3 Drain 3 F G H J 1 Drain 3 X X Gate 6C 1 2 Gate Source 72 2 1 2 Gate Source Source X=Date Code REF. A B C D E F Millimeter Min. Max. 1.80 2.20 2.00 2.40 1.15 1.35 0.80 1.00 1.20 1.40 0.30 0.40 REF. G H J K L Millimeter Min. Max. 0.00 0.10 0.425 REF. 0.10 0.25 0.650 TYP. ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Drain-Gate Voltage(RGS=1.0MΩ) SYMBOL RATINGS UNIT VDDS 60 Vdc VDGR 60 Vdc 1 Continuous Drain Current (TA=25°C) ID 1 Continuous Drain Current (TA=100°C) 2 ±115 ±75 mAdc Pulsed Drain Current IDM ±800 Continuous Gate-Source Voltage VGS ±20 Vdc Non-repetitive Gate-Source Voltage(tP≦50µs) VGSM ±40 Vpk 225 mW 1.8 mW/°C 556 -55~150 °C/W °C THERMAL CHARACTERISTICS 3 Total Device Dissipation FR-5 Board (TA=25°C) Derating above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD RθJA TJ, TSTG Notes: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2.0% 3. FR-5=1.0*0.75*0.62 in. 18-Dec-2009 Rev. B Page 1 of 3 S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 Ω N-Ch Small Signal MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 60 - - - - 1.0 - - 500 Vdc VGS = 0, ID = 10µAdc Zero Gate Voltage Drain TJ =25°C Current TJ =125°C IDSS Gate-Body Leakage Current, Forward IGSSF - - 100 nAdc VGS=20Vdc Gate-Body Leakage Current, Reverse IGSSR - - -100 nAdc VGS=-20Vdc µAdc VGS=0, VDS = 60Vdc 1 ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1.0 1.6 2.5 Vdc VDS = VGS, ID =250µAdc On-State Drain Current ID(ON) 500 - - mA VDS≧2.0VDS(ON),VGS=10Vdc - - 3.75 Static Drain-Source On-State Voltage VDS(ON) Static Drain-Source On-State Resistance (TA=25°C) rDS(ON) Static Drain-Source On-State Resistance (TA=125°C) rDS(ON) Forward Transconductance gFS Vdc - - 0.375 - 1.4 7.5 - 1.8 7.5 - - 13.5 - - 13.5 80 - - VGS=10Vdc, ID =500mAdc VGS=5Vdc, ID =50mAdc Ω Ω VGS=10Vdc, ID =500mAdc VGS=5Vdc, ID =50mAdc VGS=10Vdc, ID =500mAdc VGS=5Vdc, ID =50mAdc mmhos VDS≧2VDS(ON),ID =200mAdc DYNAMIC CHARACTERISTICS Input Capacitance Ciss - 17 50 pF VDS=25Vdc, VGS=0, f=1MHz Output Capacitance Coss - 10 25 pF VDS=25Vdc, VGS=0, f=1MHz Reverse Transfer Capacitance Crss - 2.5 5.0 pF VDS=25Vdc, VGS=0, f=1MHz nS VDD=25Vdc, ,ID≅500mAdc RG=25Ω,RL=50Ω, VGEN=10V IS=11.5mAdc,VGS=10V 1 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) - 7 20 Turn-Off Delay Time td(OFF) - 11 40 BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage VSD - - -1.5 Vdc Source Current Continuous IS - - -115 mAdc Source Current Pulsed ISM - - -800 mAdc Notes: 1. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2.0% 18-Dec-2009 Rev. B Page 2 of 3 S2N7002W Elektronische Bauelemente 115 mA, 60 V, RDS(ON) = 7.5 Ω N-Ch Small Signal MOSFET CHARACTERISTIC CURVE (N-Ch, cont’d) 18-Dec-2009 Rev. B Page 3 of 3