SECOS S2N7002

S2N7002
115 mA, 60 V, RDS(ON) = 7.5 Ω
Elektronische Bauelemente
N-Ch Small Signal MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
FEATURES
L
3
Pb-Free Package is Available
3
PACKAGING INFORMATION
1
1
K
2
E
2
Drain
3
Drain
3
D
F
702
W
1
2
Source
702 =Device Code
W =Date Code
G
REF.
Gate
1
Gate
C B
Top View
A
B
C
D
E
F
2
Source
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.80
2.00
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.013
0.10
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
MAXIMUM RATINGS (at TA = 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage(RGS=1.0 MΩ)
TC=25°C 1
Continuous Drain Current
TC=100°C 1
Pulsed Drain Current 2
Continuous Gate-Source Voltage
Non-Repetitive Gate-Source Voltage(tP≦ 50µS)
SYMBOL
RATING
UNIT
VDSS
VDGR
60
60
±115
ID
±75
IDM
±800
VGS
±20
VGSM
±40
THERMAL CHARACTERISTICS
Total Device Dissipation
TA=25°C
225
PD
FR-5 Board 3
Derate above 25°C
1.8
Thermal Resistance, Junction to Ambient
RθJA
556
Junction and Storage Temperature
TJ, TSTG
-55~150
Note: 1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦ 2.0%
3. FR-5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina
Vdc
Vdc
mAdc
mAdc
mAdc
Vdc
Vpk
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V(BR)DSS
60
T =25°C
1.0
Zero Gate Voltage Drain Current J
IDSS
TJ =125°C
500
Gate-Body Leakage Current, Forward
IGSSF
100
Gate-Body Leakage Current, Reverse
IGSSR
-100
ON CHARACTERISTICS1
Gate Threshold Voltage
VGS(th)
1.0
1.6
2.5
On-State Drain Current
ID(ON)
500
3.75
Static Drain-Source On-State Voltage
VDS(ON)
0.375
Static Drain-Source On-State Resistance
1.4
7.5
RDS(ON)
(TA=25°C)
1.8
7.5
Static Drain-Source On-State Resistance
13.5
RDS(ON)
(TA=125°C)
13.5
Forward Transconductance
gFS
80
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
17
50
Output Capacitance
Coss
10
25
Reverse Transfer Capacitance
Crss
2.5
5.0
SWITCHING CHARACTERISTICS1
Turn-On Delay Time
td(ON)
7
20
Turn-Off Delay Time
td(OFF)
11
40
BODY-DRAIN DIODE RATINGS
Diode Forward On-Voltage
VSD
-1.5
Source Current Continuous(Body Diode)
IS
-115
Source Current Pulsed
ISM
-800
Note: 1. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦ 2.0%
http://www.SeCoSGmbH.com/
24-Nov-2009 Rev. B
UNIT
Vdc
TEST CONDITION
VGS = 0, ID = 10µAdc
µAdc
VGS=0, VDS = 60Vdc
nAdc
nAdc
VGS=20Vdc
VGS=-20Vdc
Vdc
mA
VDS = VGS, ID =250µAdc
VDS≧ 2.0VDS(ON),VGS=10Vdc
VGS=10Vdc, ID =500mAdc
Vdc
VGS=5Vdc, ID =50mAdc
VGS=10Vdc, ID =500mAdc
Ω
VGS=5Vdc, ID =50mAdc
VGS=10Vdc, ID =500mAdc
Ω
VGS=5Vdc, ID =50mAdc
mmhos VDS≧ 2VDS(ON),ID =200mAdc
pF
pF
pF
VDS=25Vdc, VGS=0, f=1MHz
VDS=25Vdc, VGS=0, f=1MHz
VDS=25Vdc, VGS=0, f=1MHz
nS
VDD=25Vdc, ,ID≅500mAdc
RG=25Ω,RL=50Ω, VGEN=10V
Vdc
mAdc
mAdc
IS=11.5mAdc,VGS=0V
Any changes of specification will not be informed individually.
Page 1 of 2
S2N7002
115 mA, 60 V, RDS(ON) = 7.5 Ω
Elektronische Bauelemente
N-Ch Small Signal MOSFET
RATINGS AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
24-Nov-2009 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2