SECOS SSG9435_10

SSG9435
P-Ch Enhancement Mode Power MOSFET
-5.3 A, -30 V, RDS(ON) 55 mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG9435 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
Simple Drive Requirement
Lower On-resistance
Fast Switching Performance
PACKAGE DIMENSIONS
Date Code
D
D
D
D
8
7
6
5
SOP-8
D
9435SC
G
1
2
3
4
S
S
S
G
0.19
0.25
0.40
0.90
45
o
0.375 REF
6.20
5.80
0.25
S
3.80
4.00
1.27Typ.
0.35
0.49
4.80
5.00
0.100.25
o
0
o
8
1.35
1.75
Dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
P-ch Ratings
Unit
VDS
-30
V
VGS
±20
V
3
ID @Ta=25℃
-5.3
A
3
ID @Ta=70℃
-4.7
A
Pulsed Drain Current ,
IDM
-20
A
Total Power Dissipation
PD @Ta=25℃
2.5
W
Tj, Tstg
-55 ~ +150
℃
0.02
W/℃
Continuous Drain Current ,[email protected] 10V
Continuous Drain Current ,[email protected] 10V
1
Operating Junction and Storage Temperature Range
Linear Derating Factor
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient
10-Aug-2010 Rev. C
Max.
Symbol
Value
Unit
Rθj-amb
50
℃ /W
Page 1 of 5
SSG9435
P-Ch Enhancement Mode Power MOSFET
-5.3 A, -30 V, RDS(ON) 55 mΩ
Elektronische Bauelemente
P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVDSS
-30
-
-
V
-
-0.037
-
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
gfs
-
10
-
S
VDS=-10V, ID=-5.3A
IGSS
-
-
±100
nA
VGS= ±16V
-
-
-1
uA
VDS=-30V, VGS=0
-
-
-5
uA
VDS=-24V, VGS=0
-
-
55
-
-
90
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25℃)
Drain-Source Leakage Current(Tj=70℃)
Static Drain-Source On-Resistance
△
BVDSS/△Tj
IDSS
RDS(ON)
Test Conditions
VGS=0, ID=-250uA
V/℃ Reference to 25℃, ID=-1mA
mΩ
VGS=-10V, ID=-5.3A
VGS=-4.5 V, ID=-4.2 A
Total Gate Charge2
Qg
-
28
-
Gate-Source Charge
Qgs
-
3
-
Gate-Drain (“Miller”) Change
Qgd
-
7
-
Td(on)
-
9
-
Tr
-
15
-
Td(off)
-
75
-
Tf
-
40
-
Input Capacitance
Ciss
-
745
-
Output Capacitance
Coss
-
440
-
Reverse Transfer Capacitance
Crss
-
120
-
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
VSD
-
-0.75
-1.2
V
IS=-2.6A, VGS=0 V, TJ=25°C
IS
-
-
-2.6
A
ISM
-
-
-20
A
VD = VG = 0V,
VS = -1.2 V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=-5.3 A
VDS=-15 V
VGS=-10 V
ns
VDS=-15 V
ID=-1 A
VGS=-10 V
RG=6 Ω
RD=15 Ω
pF
VGS=0 V
VDS=-15 V
f=1.0 MHz
SOURCE-DRAIN DIODE
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
1
Pulsed Source Current (Body Diode)
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
10-Aug-2010 Rev. C
Page 2 of 5
SSG9435
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-5.3 A, -30 V, RDS(ON) 55 mΩ
CHARACTERISTIC CURVE
10-Aug-2010 Rev. C
Page 3 of 5
SSG9435
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-5.3 A, -30 V, RDS(ON) 55 mΩ
CHARACTERISTIC CURVE (cont’d)
10-Aug-2010 Rev. C
Page 4 of 5
SSG9435
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-5.3 A, -30 V, RDS(ON) 55 mΩ
CHARACTERISTIC CURVE (cont’d)
10-Aug-2010 Rev. C
Page 5 of 5