SSG4913 P-Ch Enhancement Mode Power MOSFET -3.5 A, -20 V, RDS(ON) 130 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES z z z z z The SSG4913 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Simple Drive Requirement Lower On-resistance Fast Switching Performance SOP-8 B L D M PACKAGE INFORMATION A C Weight: 0.07936g N J H MARKING CODE Drain1 4913SS = Date Code 56 2 4 Gate1 Gate2 1 S1 G1 S2 G2 E F Drain2 78 D1 D1 D2 D2 G K 1 3 Source1 Source2 REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ Operating Junction and Storage Temperature Range TJ, TSTG Linear Derating Factor Ratings Unit -20 ±8 -3.5 -2.8 -18 2 -55 ~ +150 0.02 V V A A A W ℃ W/℃ THERMAL DATA Parameter Thermal Resistance Junction-ambient3 01-December-2008 Rev. A Max Symbol RθJ-AMB Value 62.5 Unit ℃/W Page 1 of 4 SSG4913 P-Ch Enhancement Mode Power MOSFET -3.5 A, -20 V, RDS(ON) 130 mΩ Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -20 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS /ΔTJ - -0.028 - V / °C 6.5 6 0.8 1.3 6.5 20 31 21 405 170 45 -1.0 ±100 -1 -25 130 180 8.5 - V S nA uA uA Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss -0.4 - Symbol Min. Typ. Max. Unit Test Conditions VSD IS - - -1.2 -2.1 V A IS= -2.1 A, VGS=0V VD = VG = 0 V, VS = -1.2 V Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=70℃) Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS(th) gfs IGSS IDSS RDS(ON) mΩ Test Conditions VGS = 0, ID = -250 uA Reference to 25°C, ID = -250 μA VDS = VGS, ID = -250 μA VDS = -5 V, ID = -3.5 A VGS = ±8 V VDS = -16 V, VGS = 0 VDS = -12 V, VGS = 0 VGS = -4.5 V, ID = -3.5 A VGS = -2.5 V, ID = -3.0 A nC ID = -3.5 A VDS = -5 V VGS = -4.5 V ns VDD = -5 V ID = -1 A VGS = -4.5 V RG = 6 Ω pF VGS = 0 V VDS = -10 V f = 1.0 MHz SOURCE-DRAIN DIODE Parameter 2 Forward On Voltage Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 01-December-2008 Rev. A Page 2 of 4 SSG4913 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 A, -20 V, RDS(ON) 130 mΩ CHARACTERISTIC CURVE 01-December-2008 Rev. A Page 3 of 4 SSG4913 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 A, -20 V, RDS(ON) 130 mΩ CHARACTERISTIC CURVES (cont’d) 01-December-2008 Rev. A Page 4 of 4