SECOS 2N7002DW

2N7002DW
115 mAMPS, 60VOLTS, RDS(on)=7.5 W
Small Signal MOSFET
Elektronische Bauelemente
RoHS Compliant Product
SOT-363
Small Signal MOSFET
115 mAmps, 60 Volts
.055(1.40)
.047(1.20)
N–Channel SOT–363
o
8
o
0
.026TYP
(0.65TYP)
.021REF
(0.525)REF
R ating
S ymbol
Value
Unit
Drain–Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
VGS
± 20
Gate–Source Voltage
– Continuous
.053(1.35)
.045(1.15)
.096(2.45)
.085(2.15)
MA XIMUM R AT ING S
Vdc
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.006(0.15)
.003(0.08)
.087(2.20)
.079(2.00)
.004(0.10)
.000(0.00)
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
T HE R MA L C HA R A C T E R IS T IC S
C harac teris tic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
S ymbol
Max
Unit
PD
150
1.8
mW
mW/°C
RθJA
625
°C/W
TJ, Tstg
– 55 ~
+150
Dimensions in inches and (millimeters)
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≦ 300 µs, Duty Cycle ≦ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
D2
G1
S1
S2
G2
D1
MA R K ING DIA G R A M
Κ72
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3
2N7002DW
115 mAMPS, 60VOLTS, RDS(on)=7.5 W
Small Signal MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
–
–
Vdc
IDSS
–
–
–
–
1.0
500
µAdc
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
–
–
10
nAdc
Gate–Body Leakage Current, Reverse
(VGS = –ā20 Vdc)
IGSSR
–
–
–10
nAdc
VGS(th)
1.0
–
2.0
Vdc
ID(on)
0.5
1
–
A
R DS(on)
–
–
13.5
–
–
7.5
gFS
80
–
–
ms
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
–
–
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
–
–
25
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
–
–
5.0
pF
td(on)
–
–
20
ns
td(off)
–
–
20
ns
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
TC = 25°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
Forward Transconductance
(VDS = 10 V, ID = 200 mAdc)
Ohms
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
(VDD = 30
25 Vdc, ID ^ 200
500 mAdc,
RG = 25 Ω, RL = 150 Ω, Vgen = 10 V)
Any changing of specification will not be informed individual
Page 2 of 3
2N7002DW
115 mAMPS, 60VOLTS, RDS(on)=7.5 W
Small Signal MOSFET
Elektronische Bauelemente
TYPICAL ELECTRICAL CHARACTERISTICS
7
VGS = 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
0.8
0.6
Tj = 25°C
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN-SOURCE CURRENT (A)
1.0
5.5V
5.0V
0.4
0.2
6
5
VGS = 5.0V
4
3
VGS = 10V
2
1
0
0
0
1
3
2
0
5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
0.4
0.6
0.8
1.0
ID, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
6
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.2
1.5
VGS = 10V, ID = 0.5A
VGS = 5.0V, ID = 0.05A
1.0
0.5
0
-55
-30
-5
20
45
70
95
120
145
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance vs Junction Temperature
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
5
4
ID = 50mA
ID = 500mA
3
2
1
0
0
2
4
6
8
10
12
14
16
18
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
Any changing of specification will not be informed individual
Page 3 of 3