SSPS920NE 7.1 A, 20 V, RDS(ON) 20 mΩ Ω Dual-N Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION DFN3*3-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D Millimeter Min. Max. 3.0 BSC. 2.8 BSC. 0.20 0.35 0.65 BSC. REF. E F G Millimeter Min. Max. 0.08 0.25 2.3 BSC 0.7 0.9 PACKAGE INFORMATION Package MPQ Leader Size DFN3*3-8PP 3K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Ratings Unit VDS 20 V VGS Continuous Drain Current Pulsed Drain Current Symbol TA = 25°C 1 TA = 70°C 2 IDM Continuous Source Current (Diode Conduction) Total Power Dissipation ID 1 IS TA = 25°C 1 TA = 70°C Operating Junction & Storage Temperature Range PD TJ, TSTG ±8 V 7.1 A 5.8 A 40 A 2.1 A 1.5 W 1 W -55 ~ 150 °C 83 °C / W 120 °C / W Thermal Resistance Ratings Thermal Resistance Junction-ambient (Max.) 1 t≦10 sec Steady State RθJA Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 28-Jun-2013 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSPS920NE 7.1 A, 20 V, RDS(ON) 20 mΩ Ω Dual-N Channel Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage VGS(th) 0.4 - - V VDS= VGS, ID=250µA Gate-Body Leakage Current IGSS - - ±100 nA VDS=0, VGS= ±8V - - 1 µA VDS=16V, VGS=0 Zero Gate Voltage Drain Current IDSS - - 25 µA VDS=16V, VGS=0, TJ= 55°C 10 - - A VDS= 5V, VGS=4.5V - - 20 - - 24 - - 39 gfs - 15 - S VDS= 10V, ID=5.7A VSD - 0.71 - V IS=1.1A, VGS=0 On-State Drain Current 1 ID(on) Drain-Source On-Resistance Forward Transconductance 1 1 Diode Forward Voltage RDS(ON) Dynamic Qg - 6 - Gate-Source Charge Qgs - 0.9 - Gate-Drain Charge Qgd - 2.5 - Input Capacitance Ciss - 439 - Output Capacitance Coss - 78 - Reverse Transfer Capacitance Crss - 68 - Turn-On Delay Time Td(on) - 8 - Tr - 14 - Td(off) - 42 - Tf - 17 - Turn-Off Delay Time Fall Time mΩ VGS= 2.5V, ID=5.2A VGS= 1.8V, ID= 4.8A 2 Total Gate Charge Rise Time VGS= 4.5V, ID=5.7A nC ID= 5.7A VDS= 10V VGS= 4.5V pF VGS =0 VDS=15V f =1.0MHz nS VDS= 10V ID= 5.7A VGEN= 4.5V RL= 1.8Ω RGEN= 6Ω Notes: 1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 28-Jun-2013 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSPS920NE Elektronische Bauelemente 7.1 A, 20 V, RDS(ON) 20 mΩ Ω Dual-N Channel Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 28-Jun-2013 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSPS920NE Elektronische Bauelemente 7.1 A, 20 V, RDS(ON) 20 mΩ Ω Dual-N Channel Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 28-Jun-2013 Rev. A Any changes of specification will not be informed individually. Page 4 of 4