SSG4390N 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. B L M FEATURES D Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J H REF. APPLICATION A B C D E F G DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch S D S D S D G D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA = 25°C TA = 70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range ID 1.9 1.5 A IDM 10 A IS 3.6 A PD TJ, TSTG 3.1 2.2 W -55 ~ 150 °C 40 °C / W 80 °C / W THERMAL RESISTANCE RATINGS Maximum Junction to Ambient 1 t ≦ 10 sec Steady State RθJA Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 09-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSG4390N 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS=±20V Zero Gate Voltage Drain Current IDSS - - 1 - - 10 5 - - - - 625 - - 900 gfs - 5 - S VDS=15V, ID=1.9A VSD - 0.8 - V IS=1.8A, VGS=0 On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) Dynamic Qg - 3.5 - Gate-Source Charge Qgs - 1.3 - Gate-Drain Charge Qgd - 1.5 - Turn-On Delay Time Td(on) - 4.7 - Tr - 5 - Td(off) - 16 - Tf - 5 - Turn-Off Delay Time Fall Time Input Capacitance Ciss 356 Output Capacitance Coss 38 Reverse Transfer Capacitance Crss 17 A mΩ VDS=120V, VGS=0 VDS=120V, VGS=0, TJ= 55°C VDS=5V, VGS=10V VGS=10V, ID=1.9A VGS=4.5V, ID=1.6A 2 Total Gate Charge Rise Time μA nC ID=1.9A VDS=75V VGS=4.5V nS VDD=75V ID=1.9A VGEN=10V RL= 50Ω RGEN=6Ω pF VDS=15V VGS=0V f=1MHz Notes: 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 09-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4390N Elektronische Bauelemente 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 09-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4390N Elektronische Bauelemente 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 09-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4