SID3055
15A, 30V,RDS(ON)80mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
TO-251
2.3±0.1
6.6±0.2
5.3±0.2
0.5±0.05
Description
The TO-251 is universally preferred for all commercial-industrial
7.0±0.2
5.6±0.2
surface mount applications and suited for low voltage applications
such as DC/DC converters.
1.2±0.3
0.75±0.15
7.0±0.2
0.6±0.1
0.5±0.1
2.3REF.
G
D
S
Dimensions in millimeters
D
Marking Code: 3055
XXXX(Date Code)
G
S
Absolute Maximum Ratings
Parameter
Symbol
V
± 20
V
15
A
ID@TC=100C
9
A
IDM
50
A
28
W
VDS
Gate-Source Voltage
VGS
o
Continuous Drain Current,VGS@10V
ID@TC=25 C
Continuous Drain Current,VGS@10V
o
Pulsed Drain Current
Total Power Dissipation
o
PD@TC=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Unit
30
Drain-Source Voltage
1
Ratings
Tj, Tstg
o
0.22
W/ C
-55~+150
o
C
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
4.5
o
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
o
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 6
SID3055
15A, 30V,RDS(ON)80mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
30
_
BVDS/ Tj
_
VGS(th)
1.0
_
3.0
V
IGSS
_
_
±100
nA
VGS=±20V
_
_
25
uA
VDS=30V,VGS=0
_
_
250
uA
VDS=24V,VGS=0
_
14.5
16.5
_
21.5
25
5.4
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
Static Drain-Source On-Resistance
IDSS
RD S (O N )
Total Gate Charge2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
_
Tr
_
Td(Off)
_
Tf
_
Coss
Reverse Transfer Capacitance
1.3
_
Td(ON)
Ciss
0.037
_
_
Crss
_
Symbol
Min.
Max.
_
V
_
V/ C
_
3.6
_
3.6
_
19.8
_
13
_
3.2
_
260
_
144
13
Unit
o
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VDS=VGS, ID=250uA
VGS=10V, ID=28A
VGS=4.5V, ID=22A
nC
ID=8 A
VDS=24V
VGS= 5V
VDD=15V
ID=8A
nS
VGS=10V
RG=3.4Ω
RD=1.9 Ω
_
pF
VGS=0V
VDS=25V
f=1.0MHz
_
Source-Drain Diode
Parameter
Typ.
Forward On Voltage 2
VSD
_
_
Continuous Source Current(Body Diode)
IS
_
_
1
Pulsed Source Current(Body Diode)
ISM
Max.
Unit
Test Condition
o
1.3
V
IS=15 A, VGS=0V.Tj=25C
_
15
A
VD=VG=0V,VS=1.3 V
_
50
A
Notes: 1.Pulse width limited by safe operating area.
2. Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 6
SID3055
Elektronische Bauelemente
15A, 30V,RDS(ON)80mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 6
SID3055
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
15A, 30V,RDS(ON)80mΩ
N-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 4 of 6
SID3055
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
15A, 30V,RDS(ON)80mΩ
N-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 5 of 6
SID3055
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
15A, 30V,RDS(ON)80mΩ
N-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 6 of 6