SSM3055
Elektronische Bauelemente
4A, 30V,RDS(ON) 80mΩ
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-223
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Description
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The SSM3055 Provide the designer with the best Combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 Package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage application such as DC/DC conerters.
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Features
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* Dynamic dv/dt Rating
* Simple Drive Requirement
* Repetitive Avalanche Rated
G
* Fast Switching
S
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID@TA=25к
4
A
Continuous Drain Current, VGS@10V
ID@TA=75к
3.2
A
IDM
20
A
PD@TA=25к
2.7
W
0.02
W /e
C
-55~+150
e
C
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
Unit
45
e
C/W
Any changing of specification will not be informed individual
Page 1 of 4
SSM3055
4A, 30V,RDS(ON) 80mΩ
Elektronische Bauelemente
Electrical Characteristics( Tj=25 oC
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
N-Channel Enhancement Mode Power Mos.FET
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
BVDSS
30
_
_
V
BVDS/ Tj
_
0.037
_
V/ C
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=± 20V
_
_
25
uA
VDS=30V,VGS=0
_
_
250
uA
VDS=24V,VGS=0
_
_
80
o
Drain-Source Leakage Current (Tj=25 C)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance
IDSS
RDS(ON)
_
_
Qg
_
5.4
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Total Gate Charge
2
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
o
Reference to 25 C,ID=1mA
VGS=10V, ID=4A
VGS=4.5V, ID=3A
100
_
1.3
_
3.6
_
nC
ID=4A
VDS=24V
VGS=5V
_
3.6
Tr
_
19.8
_
Td(Off)
_
13
_
Tf
_
3.2
_
_
260
_
144
_
13
_
Min.
Typ.
Max.
Unit
_
_
1.3
V
VS=2A, VGS=0V.Tj=25
_
_
4
A
VD=VG=0V, Vs=1.3V
_
_
20
A
Coss
Crss
Reverse Transfer Capacitance
mΩ
VGS=0V, ID=250uA
Td(ON)
Ciss
Output Capacitance
_
o
Test Condition
_
_
VDD=15V
ID=1A
nS
VGS=10V
RG=3.3 Ω
RD=1.9 Ω
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Forward On Voltage 2
VDS
Continuous Source Current(Body Diode)
IS
1
Pulsed Source Current (Body Diode)
ISM
Test Condition
Notes: 1.Pulse width Limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSM3055
Elektronische Bauelemente
4A, 30V,RDS(ON) 80mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
SSM3055
Elektronische Bauelemente
4A, 30V,RDS(ON) 80mΩ
N-Channel Enhancement Mode Power Mos.FET
4A
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Circuit
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4