SMG2307
-4.0A, -16V,RDS(ON) 60mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SC-59
A
Description
L
The SMG2307 is universally preferred for all commercial
S
2
industrial surface mount application and suited for low
3
Top View
B
1
voltage applications such as DC/DC converters.
D
G
Features
J
C
* Super high dense cell design for extremely low RDS(ON)
K
H
* Reliable and rugged
Drain
Gate
Applications
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
D
Source
Dim
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
Marking : 2307
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
Ratings
Unit
-16
V
±8
V
-4.0
A
ID@TA=70 C
-3.3
A
IDM
-12
A
1.38
W
0.01
W/ C
VDS
Sate-Source Voltage
VGS
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
Total Power Dissipation
o
ID@TA=25 C
o
o
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
o
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG2307
-4.0A, -16V,RDS(ON) 60mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
Electrical Characteristics( Tj=25 oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70 oC)
Static Drain-Source On-Resistance2
Symbol
Min.
Typ.
Max.
Unit
BVDSS
-16
_
_
V
BVDS/ Tj
_
-0.01
_
V/ oC
VGS(th)
-0.5
_
_
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 8V
_
_
-1
uA
VDS=-16V,VGS=0
_
_
-25
uA
VDS=-12V,VGS=0
_
_
60
IDSS
RDS(ON)
_
_
70
Qg
_
15
24
Gate-Source Charge
Qgs
_
1.3
_
Gate-Drain ("Miller") Charge
Qgd
4
_
Total Gate Charge
2
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Td(ON)
_
8
_
Tr
_
11
_
Td(Off)
_
54
_
Tf
_
36
_
_
985
1580
180
_
160
_
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Forward Transconductance
_
_
mΩ
Test Condition
VGS=0V, ID=-250uA
o
Reference to 25 C ,ID=-1mA
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-3A
nC
ID=-4.0A
VDS=-12V
VGS=-4.5V
VDS=-10V
ID=-1A
nS
VGS=-10V
RG=3.3Ω
RD=10Ω
pF
VGS=0V
VDS=-15V
VDS=-5V, ID=-4A
f=1.0MHz
Crss
_
Gfs
_
12
_
S
Symbol
Min.
Typ.
Max.
Unit
Test Condition
VSD
_
_
-1.2
V
IS=-1.2A, VGS=0V.
Trr
_
39
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Qrr
_
26
_
_
nS
Is=4.0A, VGS=0
nC
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG2307
Elektronische Bauelemente
-4.0A, -16V,RDS(ON) 60m Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
SMG2307
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-4.0A, -16V,RDS(ON) 60mΩ
P-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 4 of 4