SMG2304 2.7A, 25V,RDS(ON) 117mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L SC-59 Description The SMG2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. S 2 3 Top View B 1 D G J C Features * Reliable And Rugged * Super High Dense Cell Design For Extremely Low RDS(ON) K H Drain Gate Source Applications D Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm * Power Management in Notebook Computer * Protable Equipment * Battery Powered System G Marking : 2304 S Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, [email protected] Continuous Drain Current, [email protected] Pulsed Drain Current 2.7 A o ID@TA=70 C 2.2 A IDM 10 A 1.38 W 0.01 W / oC -55~+150 o PD@TA=25 C Linear Derating Factor Tj, Tstg Operating Junction and Storage Temperature Range V V o Total Power Dissipation 25 ±20 ID@TA=25 C 3 Unit o VGS 3 Ratings C Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol 3 Max. Rthj-a Ratings 90 Unit o C /W Any changing of specification will not be informed individual Page 1 of 5 SMG2304 2.7A, 25V,RDS(ON) 117mΩ Elektronische Bauelemente o Electrical Characteristics( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current N-Channel Enhancement Mode Power Mos.FET Unless otherwise specified) Symbol Min. Typ. Max. Unit BVDSS 25 _ _ V BVDS/ Tj _ 0.1 _ V/ VGS(th) 1.0 _ 3.0 V VDS=VGS, ID=250uA IGSS _ _ ±100 nA VGS=±20V _ _ 1 uA VDS=25V,VGS=0 _ _ 10 uA VDS=25V,VGS=0 _ _ 117 o Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 IDSS RDS(ON) _ Qg _ Gate-Source Charge Qgs _ 0.8 Gate-Drain ("Miller") Charge Qgd _ 2.1 _ 4.5 _ 11.5 _ Total Gate Charge 2 Turn-on Delay Time 2 Td(ON) Rise Time Tr Turn-off Delay Time Fall Time Input Capacitance _ _ 5.9 Td(Off) _ Tf _ 3 _ 110 Ciss _ 12 190 _ o Reference to 25 C, ID=1mA VGS=10V, ID=2.5A mΩ 10 _ VGS=0V, ID=250uA nC VGS=4.5V, ID=2A ID=2.5A VDS=15V VGS=10V VDS=15V ID=1A nS VGS=10V RG=6 Ω RD=15Ω _ _ VGS=0V VDS=15V 85 _ 39 _ _ 3.4 _ S VDS=4.5V, I D=2.5A Symbol Min. Typ. Max. Unit Test Condition VSD _ _ 1.2 V Is _ _ 1 A _ _ 10 A Output Capacitance Coss Reverse Transfer Capacitance Crss _ Gfs Forward Transconductance _ Test Condition pF f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current(Body Diode) 1 Pulsed Source Current(Body Diode) ISM o IS=1.25A ,VGS=0,Tj=25 C VD=VG=0V,VS=1.2V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 5 SMG2304 2.7A, 25V,RDS(ON) 117mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 5 SMG2304 2.7A, 25V,RDS(ON) 117mΩ Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A N-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual Page 4 of 5 SMG2304 2.7A, 25V,RDS(ON) 117mΩ Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A N-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual Page 5 of 5