SGM2501
-2.6A, -20V,RDS(ON) 200m Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-89
Description
The SGM2301 provides the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness. The SOT-89 package is
universally preferred for all commercial-industrial
surface mount applications and suited for low
voltage and battery power applications.
Features
* Surface Mount Device
* Simple Drive Requirement
REF.
A
B
C
D
E
F
D
G
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
3
Ratings
Unit
VDS
-20
V
VGS
±12
V
o
-2.6
A
o
ID@TA=70 C
-2.1
A
IDM
-10
A
PD@TA=25 oC
1.5
W
0.012
W/ C
ID@TA=25 C
3
1,2
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
o
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
83.3
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SGM2501
-2.6A, -20V,RDS(ON) 200m Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 oC Unless otherwise specified)
Parameter
Symbol
Min.
BVDSS
-20
_
_
V
BVDS/ Tj
_
-0.1
_
V/ C
VGS(th)
-0.5
_
_
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 12V
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-10
uA
VDS=-16V,VGS=0
_
_
200
_
_
250
_
_
300
Qg
_
5.2
10
Gate-Source Charge
Qgs
_
1.36
_
Gate-Drain ("Miller") Charge
Qgd
_
0.6
_
Td(ON)
_
5.2
_
9.7
_
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
o
IDSS
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance
2
RDS(ON)
2
Total Gate Charge
Turn-on Delay Time2
Rise Time
Tr
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
_
Typ.
Max.
Td(Off)
_
19
_
Tf
_
29
_
Ciss
_
295
_
170
_
65
_
4.4
_
Coss
_
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
Unit
o
Test Condition
VGS=0V, ID=-250uA
o
Reference to 25 C, ID=-1mA
VGS=-10 V, ID=-2.6A
mΩ
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
nC
ID=-2.8A
VDS=-6.0V
VGS=-5.0V
VDS=-15V
ID=-1A
nS
VGS=-10V
RG=6Ω
RD=15Ω
pF
VGS=0V
VDS=-6V
S
VDS=-5V, ID=-2.6A
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
2
VSD
Continuous Source Current (Body Diode)
Is
Forward On Voltage
Pulsed Source Current (Body Diode)
1
ISM
Min.
Typ.
_
_
_
_
_
_
Max.
Unit
Test Condition
o
-1.2
V
IS=-1.6A,VGS=0V,Tj=25 C
-1
A
VD=VG=0V, VS=-1.2V
-10
A
G
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on FR4 board, t ≦10sec.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SGM2501
-2.6A, -20V,RDS(ON) 200m Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 3 of 4
SGM2501
-2.6A, -20V,RDS(ON) 200m Ω
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4