SECOS SMG2314N

SMG2314N
4A , 20V, RDS(ON) 32 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
SC-59
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell
Density process. Low RDS(on) assures minimal power loss and
conserves energy, making this device ideal for use in power
management circuitry. Typical applications are power switch,
power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
A
L
3
3
C B
Top View
1
1
2
K
E
2
D
FEATURES




F
Low RDS(on) provides higher efficiency and extends
battery life.
Low gate charge
Fast switch
Miniature SC-59 surface mount package saves
board space.
H
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SC-59
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
Ratings
Unit
VDS
VGS
20
±12
4.0
3.1
±20
1.6
1.3
0.8
-55 ~ 150
V
V
A
A
A
A
W
W
°C
100
166
°C / W
ID @ TA=25°C
ID @ TA=70°C
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
IDM
IS
PD @ TA=25°C
PD @ TA=70°C
Power Dissipation 1
ID
Operating Junction and Storage Temperature Range
PD
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
Notes:
1
2
t ≦ 5 sec
Steady State
RJA
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
27-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
SMG2314N
4A , 20V, RDS(ON) 32 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
VGS(th)
0.7
-
-
V
VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS= 0V, VGS= ±8V
Zero Gate Voltage Drain Current
IDSS
-
-
1
-
-
10
10
-
-
-
-
32
-
-
44
gfs
-
11.3
-
S
VDS= 10V, ID= 4.0A
VSD
-
0.75
-
V
IS= 1.6A, VGS= 0V
Gate-Threshold Voltage
On-State Drain Current
1
ID(on)
Drain-Source On-Resistance 1
Forward Transconductance
Diode Forward Voltage
1
RDS(ON)
Dynamic
Qg
-
13.4
-
Gate-Source Charge
Qgs
-
0.9
-
Gate-Drain Charge
Qgd
-
2.0
-
Turn-on Delay Time
Td(on)
-
8
-
Tr
-
24
-
Td(off)
-
35
-
Tf
-
10
-
Trr
-
40
-
Turn-off Delay Time
Fall Time
Source-Ddrain Reverse
Recovery Time
Notes:
1
2
A
VDS= 16V, VGS= 0V
VDS= 16V, VGS= 0V, TJ= 55°C
VDS = 5V, VGS= 4.5V
mΩ
VGS= 4.5V, ID= 4.6A
VGS= 2.5V, ID= 3.9A
2
Total Gate Charge
Rise Time
uA
Test Conditions
nC
nS
VDS= 10V, VGS= 4.5V,
ID= 4.0A
VDD= 10V, VGEN= 4.5V,
RL= 15, ID= 1A
IF=1.6A, di/dt =100 A/uS
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
27-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SMG2314N
Elektronische Bauelemente
4A , 20V, RDS(ON) 32 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
27-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SMG2314N
Elektronische Bauelemente
4A , 20V, RDS(ON) 32 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
27-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4