SMG2322N 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A L 3 3 C B Top View 1 FEATURES 1 2 K Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. E 2 D G H Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. F REF. A B C D E F APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 IDM Continuous Source Current (Diode Conduction) Power Dissipation 1 ID 1 IS TA=25°C TA=70°C Operating Junction and Storage Temperature Range PD TJ, TSTG 2.5 2 A 10 A 0.46 A 1.25 0.8 -55~150 W °C Thermal Resistance Rating Maximum Junction to Ambient 1 t≦5 sec Steady-State RθJA 150 200 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SMG2322N 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Gate-Threshold Voltage VGS(th) 1 1.5 3 V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - 4 100 nA VDS=0, VGS=8V Zero Gate Voltage Drain Current IDSS - - 1 - - 10 6 - - - 62 85 - 102 125 gFS - 3.5 - S VDS=5V,,ID=3A VSD - 0.65 - V IS=0.46A, VGS=0 On-State Drain Current 1 ID(ON) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) Dynamic Qg - 3.5 7 Gate-Source Charge Qgs - 0.8 2 Gate-Drain Charge Qgd - 1.0 2 Input Capacitance Ciss - 720 1500 Output Capacitance Coss - 165 400 Reverse Transfer Capacitance Crss - 60 200 Td(ON) - 10 20 Tr - 13 30 Td(OFF) - 14 30 Tf - 4 20 Rise Time Turn-Off Delay Time Fall Time A mΩ VDS=16V, VGS=0 VDS=20V, VGS=0, TJ=55°C VDS=5V, VGS=4.5V VGS=10V, ID=2.5A VGS=4.5V, ID=1.7A 2 Total Gate Charge Turn-On Delay Time μA nC ID=2.5A VDS=10V VGS=4.5V pF VDS=15V VGS=0 f=1MHz nS ID=1A, VDD=10V VGEN=4.5V RG=6Ω Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SMG2322N Elektronische Bauelemente 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SMG2322N Elektronische Bauelemente 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4