SSG4953P -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. B L D M A C N J FEATURES H Low RDS(on) provides higher efficiency and extends battery life. Miniature SOP-8 surface mount package saves board space. High power and current handling capability.. Extended VGS range (±25) for battery pack applications. REF. A B C D E F G K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch S D G D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Symbol Ratings Unit VDS -30 V VGS Continuous Drain Current 1 TA = 25°C TA = 70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 TA = 25°C Power Dissipation 1 TA = 70°C Operating Junction & Storage Temperature Range ID @ ±25 V -5.2 A -4.2 A IDM -30 A IS -1.6 A 2.1 W PD @ TJ, TSTG 1.3 W -55 ~ 150 °C Thermal Resistance Ratings Junction to Case (Max.) 1 Junction to Ambient (Max.) 1 t≦5 sec RθJC 40 °C / W t≦10 sec RθJA 60 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 15-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSG4953P -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage VGS(th) -1 - - V VDS= VGS, ID= -250μA Gate-Body Leakage Current IGSS - - ±100 nA VDS= 0V, VGS= ±25V Zero Gate Voltage Drain Current IDSS - - -1 μA VDS= -24V, VGS= 0V - - -5 μA VDS= -24V, VGS= 0V, TJ=55°C On-State Drain Current 1 ID(on) -30 - - A VDS= -5V, VGS= -10V - - 52 - - 89 Drain-Source On-Resistance 1 RDS(ON) mΩ VGS= -10V, ID= -5.2A VGS= -4.5V, ID= -4.0A Forward Transconductance 1 gfs - 19 - S VDS= -15V, ID= -5.2A Diode Forward Voltage VSD - -0.7 - V IS= -2.1A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 15 - Gate-Source Charge Qgs - 2.2 - Gate-Drain Charge Qgd - 1.7 - Turn-On Delay Time Td(on) - 10 - Tr - 2.8 - Td(off) - 53.6 - Tf - 46 - Rise Time Turn-Off Delay Time Fall Time nC ID= -5.2A VDS= -15V VGS= -10V nS VDD= -15V ID= -1A VGEN= -10V RL= 15Ω, RG= 6Ω Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 15-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4953P Elektronische Bauelemente -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4953P Elektronische Bauelemente -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4