SMG2314NE

SMG2314NE
5.3 A, 20 V, RDS(ON) 32 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell
Density process. Low RDS(on) assures minimal power loss and
conserves energy, making this device ideal for use in power
management circuitry. Typical applications are PWMDC-DC
converters, power management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones power system.
SC-59
A
3



C B
Top View
1
1
2
K
E
2
D
FEATURES

L
3
F
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature SC-59 surface mount package saves
board space.
High power and current handling capability.
MLow side high current DC-DC Converter applications
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
Leader Size
SC-59
3K
7’ inch
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
5.3
A
4.1
A
IDM
20
A
IS
1.8
A
1.3
W
0.8
W
-55 ~ 150
°C
Continuous Drain Current 1
Pulsed Drain Current
TA=25°C
TA=70°C
2
Continuous Source Current (Diode Conduction)
Power Dissipation 1
1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
ID
PD
TJ, TSTG
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient 1
t ≦ 10 sec
Steady State
RJA
100
166
°C / W
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
SMG2314NE
5.3 A, 20 V, RDS(ON) 32 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
VGS(th)
0.4
-
-
V
VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS
-
-
±10
nA
VDS=0, VGS= ±12V
Zero Gate Voltage Drain Current
IDSS
-
-
1
-
-
25
10
-
-
-
-
32
-
-
44
gfs
-
11
-
S
VDS=15V, ID= 4.2A
VSD
-
0.7
-
V
IS=0.9A, VGS=0
pF
VDS= 10V,
VGS= 4.5V,
f=1MHz.
nC
VDS= 10V,
VGS= 4.5V,
ID= 4.2A.
nS
VDS= 10V,
VGEN= 4.5V,
RGEN=6Ω,
RL=2.4Ω,
ID=4.2A.
Gate-Threshold Voltage
On-State Drain Current
1
ID(on)
Drain-Source On-Resistance 1
Forward Transconductance
1
Diode Forward Voltage
RDS(ON)
Dynamic
Ciss
-
413
-
Output Capacitance
Coss
-
76
-
Reverse Transfer Capacitance
Crss
-
67
-
Total Gate Charge
Qg
-
6.2
-
Gate-Source Charge
Qgs
-
1
-
Gate-Drain Charge
Qgd
-
2
-
Turn-on Delay Time
Td(on)
-
6
-
Tr
-
19
-
Td(off)
-
47
-
Tf
-
67
-
Turn-off Delay Time
Fall Time
A
VDS=16V, VGS=0
VDS=16V, VGS=0, TJ= 55°C
VDS =5V, VGS=4.5V
mΩ
VGS=4.5V, ID=4.2A
VGS=2.5V, ID=3.8A
2
Input Capacitance
Rise Time
uA
Test Conditions
Notes
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
SMG2314NE
Elektronische Bauelemente
5.3 A, 20 V, RDS(ON) 32 m
N-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
SMG2314NE
Elektronische Bauelemente
5.3 A, 20 V, RDS(ON) 32 m
N-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4