SSP7432N 24 A, 30 V, RDS(ON) 4.9 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ Leader Size SOP-8PP 3K 13 inch REF. A B C D E F G L Millimeter Min. Max. 0.85 1.00 5.3 BSC. 0.15 0.25 3.8 BCS. 6.05 BCS. 0.03 0.30 4.35 BCS. 0.40 0.70 REF. θ b c d e f g Millimeter Min. Max. 0° 10° 5.2 BCS 0.30 0.50 1.27BSC 5.55 BCS. 0.10 0.40 1.2 BCS. ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V TA=25°C Continuous Drain Current 1 TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range ID 24 20 A IDM 60 A IS 2.9 A PD TJ, TSTG 5.0 3.2 -55 ~ 150 W °C Thermal Resistance Data Maximum Junction to Ambient 1 t≦10 sec Steady-State RθJA 25 65 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 18-Sep-2013 Rev. B Any changes of specification will not be informed individually. Page 1 of 2 SSP7432N 24 A, 30 V, RDS(ON) 4.9 m N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS = VGS, ID = 250μA Gate-Body Leakage IGSS - - 100 nA VDS = 0V, VGS= 12V Zero Gate Voltage Drain Current IDSS - - 1 - - 5 30 - - - - 4.9 - - 5.9 gFS - 90 - S VDS= 15V,,ID = 24A VSD - 0.7 - V IS= 2.3A, VGS= 0V On-State Drain Current 1 ID(ON) Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) Dynamic Total Gate Charge Qg - 25 - 6 - Gate-Drain Charge Qgd - 9 - Turn-On Delay Time Td(ON) - 20 - Tr - 13 - Td(OFF) - 82 - Tf - 43 - Fall Time Notes 1. 2. mΩ - Qgs Turn-Off Delay Time A VDS = 24V, VGS= 0V VDS = 24V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 10V VGS= 4.5V, ID = 24A VGS= 2.5V, ID = 21A 2 Gate-Source Charge Rise Time μA nC ID= 24A VDS= 15V VGS= 4.5V nS ID= 1A, VDD= 15V VGEN= 10V RL= 6Ω Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 18-Sep-2013 Rev. B Any changes of specification will not be informed individually. Page 2 of 2